NV25010MUW集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

NV25010MUW屬于集成電路（IC）的存儲(chǔ)器。由安森美半導(dǎo)體公司制造生產(chǎn)的NV25010MUW存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

The NV25010/20/40 are a EEPROM Serial 1/2/4?Kb SPI

Automotive Grade 1 devices internally organized as

128x8/256x8/512x8 bits. They feature a 16?byte page write buffer and

support the Serial Peripheral Interface (SPI) protocol. The device is

enabled through a Chip Select (CS) input. In addition, the required bus

signals are a clock input (SCK), data input (SI) and data output (SO)

lines. The HOLD input may be used to pause any serial

communication with the NV25010/20/40 device. These devices

feature software and hardware write protection, including partial as

well as full array protection.

Features

? Automotive AEC?Q100 Grade 1 (?40°C to +125°C) Qualified

? 10 MHz SPI Compatible

? 1.8 V to 5.5 V Supply Voltage Range

? SPI Modes (0,0) & (1,1)

? 16?byte Page Write Buffer

? Self?timed Write Cycle

? Hardware and Software Protection

? Block Write Protection

? Protect 1/4, 1/2 or Entire EEPROM Array

? Low Power CMOS Technology

? 1,000,000 Program/Erase Cycles

? 100 Year Data Retention

? Wettable Flank UDFN 8?pad Package

? These Devices are Pb?Free, Halogen Free/BFR Free, and RoHS

Compliant