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NV25040UVLT2G中文資料安森美半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

NV25040UVLT2G
廠商型號

NV25040UVLT2G

功能描述

EEPROM Serial 1/2/4-Kb SPI Low Voltage Automotive Grade 1

文件大小

312.42 Kbytes

頁面數(shù)量

14

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-13 10:04:00

NV25040UVLT2G規(guī)格書詳情

Description

NV25010LV, NV25020LV and NV25040LV are EEPROM Serial

1/2/4?Kb SPI Low Voltage Automotive Grade 1 devices internally

organized as 128x8, 256x8 and 512x8 bits. They feature a 16?byte

page write buffer and support the Serial Peripheral Interface (SPI)

protocol. The devices are enabled through a Chip Select (CS) input. In

addition, the required bus signals are clock input (SCK), data input

(SI) and data output (SO) lines. The HOLD input may be used to pause

any serial communication with the NV250x0 device. The device

features software and hardware write protection, including partial as

well as full array protection. Byte Level On?Chip ECC (Error

Correction Code) makes the device suitable for high reliability

applications. The device offers an additional Identification Page which

can be permanently write protected.

Features

? Automotive AEC?Q100 Grade 1 (?40°C to +125°C) Qualified

? 1.7 V to 5.5 V Supply Voltage Range

? 20 / 10 MHz SPI Compatible

? SPI Modes (0,0) & (1,1)

? 16?byte Page Write Buffer

? Self?timed Write Cycle

? Hardware and Software Protection

? Additional Identification Page with Permanent Write Protection

? NV Prefix for Automotive and Other Applications Requiring Site and

Change Control

? Block Write Protection

? Protect 1/4, 1/2 or Entire EEPROM Array

? Low Power CMOS Technology

? Program/Erase Cycles:

? 4,000,000 at 25°C

? 1,200,000 at +85°C

? 600,000 at +125°C

? 200 Year Data Retention

? SOIC, TSSOP, US 8?lead & Wettable Flank UDFN 8?pad Packages

? This Device is Pb?Free, Halogen Free/BFR Free, and RoHS

Compliant

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