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NVBG110N65S3F中文資料安森美半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

NVBG110N65S3F
廠商型號

NVBG110N65S3F

功能描述

MOSFET - Power, Single N-Channel, D2PAK-7L 650 V, 110 m, 30 A

文件大小

235.91 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

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更新時間

2025-1-28 9:30:00

NVBG110N65S3F規(guī)格書詳情

Description

SUPERFET? III MOSFET is onsemi’s brand?new high voltage

super?junction (SJ) MOSFET family that is utilizing charge balance

technology for outstanding low on?resistance and lower gate charge

performance. This advanced technology is tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate.

Consequently, SUPERFET III MOSFET is very suitable for the

various power system for miniaturization and higher efficiency.

SUPERFET III FRFET? MOSFET’s optimized reverse recovery

performance of body diode can remove additional component and

improve system reliability.

In addition, the D2PAK 7 lead package offers Kelvin sense. This

allows higher switching speeds and gives designers the ability to

reduce the overall application footprint.

Features

? 700 V @ TJ = 150°C

? Typ. RDS(on) = 93 m

? Ultra Low Gate Charge (Typ. Qg = 58 nC)

? Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF)

? 100 Avalanche Tested

? AEC?Q101 Qualified and PPAP Capable

? These Devices are Pb?Free and are RoHS Compliant

Typical Applications

? Automotive On Board Charger

? Automotive DC/DC Converter for BEV

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ON SEMICONDUCTOR
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35960
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8000
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ON
21+
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3000
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ON
22+
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30000
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ON(安森美)
22+
NA
8000
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ON(安森美)
23+
標準封裝
5000
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ONSEMI/安森美
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TO-LL8L
360000
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onsemi(安森美)
23+
TO2637
7350
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6000
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