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NVMYS025N06CLTWG

Marking：025N06CL；Package：LFPAK4；MOSFET – Power, Single N-Channel 60 V, 27.5 m, 21 A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?LFPAK4Package,IndustryStandard ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FDI025N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=265A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDI025N06

N-ChannelPowerTrench?MOSFET60V,265A,2.5m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP025N06

N-ChannelPowerTrench?MOSFET60V,265A,2.5m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP025N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=265A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

GT025N06AM

N-ChannelEnhancementModePowerMOSFET

Description TheGT025N06AMusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters lSynchronousRectification

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GT025N06AMA

N-ChannelEnhancementModePowerMOSFET

Description TheGT025N06AMAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters lSynchronousRectification

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GT025N06AQ

N-ChannelEnhancementModePowerMOSFET

Description TheGT025N06AQusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters lSynchronousRectification

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GT025N06AT

N-ChannelEnhancementModePowerMOSFET

Description TheGT025N06ATusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters lSynchronousRectification

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

IPD025N06N

Optimizedforsynchronousrectification

Features ?Optimizedforsynchronousrectification ?100avalanchetested ?Superiorthermalresistance ?N-channel,normallevel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號品牌批號封裝庫存備注價格
onsemi
24+
LFPAK4(5x6)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
onsemi(安森美)
23+
LFPAK-4
9908
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
ON
24+
NA
3000
進口原裝 假一罰十 現(xiàn)貨
 詢價
ON
21+
NA
3000
進口原裝 假一罰十 現(xiàn)貨
 詢價
ON(安森美)
22+
NA
8000
原廠原裝現(xiàn)貨
 詢價
ON(安森美)
23+
標(biāo)準(zhǔn)封裝
8000
正規(guī)渠道,只有原裝!
 詢價
ON(安森美)
23+
標(biāo)準(zhǔn)封裝
5000
原廠原裝現(xiàn)貨訂貨價格優(yōu)勢終端BOM表可配單提供樣品
 詢價
ON(安森美)
23+
NA/
8735
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
 詢價
21+
N/A
5313
全新原裝虧本出
 詢價
ON SEMICONDUCTOR
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價
更多NVMYS025N06CLTWG供應(yīng)商 更新時間2025-3-20 17:08:00

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