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NVTFS020N06C

MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m, 27 A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS020N06C?WettableFlankOptionforEnhancedOptical Inspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVTFS020N06CTAG

Marking：20NC；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m, 27 A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS020N06C?WettableFlankOptionforEnhancedOptical Inspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVTFWS020N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,20.3m,27A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS020N06C?WettableFlankOptionforEnhancedOptical Inspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PRM020N06D

60VSingleN-ChannelMOSFET

PFC

PFC Device Inc.

PRM020N06E

60VSingleN-ChannelMOSFET

PFC

PFC Device Inc.

RHP020N06

4VDriveNchMOSFET

Features 1)LowOn-resistance. 2)Highspeedswitching. 3)WideSOA. Applications Switching

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RHP020N06

4VDriveNchMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RHP020N06

4VDriveNchMOSFET

Features 1)LowOn-resistance. 2)Highspeedswitching. 3)WideSOA. Applications Switching

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RHP020N06FRA

4VDriveNchMOSFET

Features 1)LowOn-resistance. 2)Highspeedswitching. 3)WideSOA. Applications Switching

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RJP020N06

2.5VDriveNchMOSFET

Features 1)LowOn-resistance. 2)Lowvoltagedrive(2.5Vdrive). Applications Switching

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

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SMD
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589220
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量
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onsemi(安森美)
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更多NVTFS020N06C供應(yīng)商 更新時(shí)間2025-2-24 18:27:00

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