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PBPC302

3.0ABRIDGERECTIFIER

Features ?HighCurrentCapability ?SurgeOverloadRatingto50APeak ?HighCaseDielectricStrengthof1500V ?IdealforPrintedCircuitBoardApplication ?ULListedUnderRecognizedComponentIndex,FileNumberE94661

DIODES

Diodes Incorporated

PBSS302ND

40V,4ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS302PD. Features ■Ultralowcollector-emittersaturationvoltageVCEsat ■4AcontinuouscollectorcurrentcapabilityI

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS302ND

40V,4ANPNlowVCEsat(BISS)transistor

1.1Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74) smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS302PD. 1.2Features *Ultralowcollector-emittersaturationvoltageVCEsat *4Acontinuouscollectorcurrentc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS302NX

20V,5.3ANPNlowVCEsat(BISS)transistor

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS302NX

20V,5.3ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS302NZ

20V,5.8ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS302PZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS302NZ

20V,5.8ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS302PZ 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorcur

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS302NZ-Q

20V,5.8ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorcurrentgain(hFE)athighIC

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS302PD

40VPNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughinSmallSignal(BISS)singlebipolarPNPtransistorinaSOT457(SC-74)SMDplasticpackage. NPNcomplement:PBSS302ND Features ■Ultralowcollector-emittersaturationvoltageVCEsat ■4AcontinuouscollectorcurrentcapabilityIC(DC) ■Up

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS302PD

40V,4APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74)smallSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS302ND. Features ■Ultralowcollector-emittersaturationvoltageVCEsat ■4AcontinuouscollectorcurrentcapabilityI

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    OD302JE

  • 制造商：

    Ohmite

  • 類別：

    電阻器 > 通孔式電阻器

  • 系列：

    Little Demon? OD

  • 包裝：

    帶

  • 容差：

    ±5%

  • 功率 (W)：

    0.25W，1/4W

  • 成分：

    炭化物

  • 特性：

    脈沖耐受

  • 封裝/外殼：

    軸向

  • 供應(yīng)商器件封裝：

    軸向

  • 大小 / 尺寸：

    0.098" 直徑 x 0.276" 長(zhǎng)（2.50mm x 7.00mm）

  • 描述：

    RES 3K OHM 5% 1/4W AXIAL

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
新
10
全新原裝 貨期兩周
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2022+
6
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Ohmite
2010+
N/A
141
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OHMITE
20+
電阻器
7283
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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OHMITE
23+
NA
4486
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ODTECH
23+
SMD
28533
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ODTECH
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SOP-8
89630
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ODTECH
11+
SMD
880000
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NXP
23+
SSOP20
5000
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OHMITE
23+
45592
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更多OD302JE供應(yīng)商 更新時(shí)間2025-4-26 16:06:00

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