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P12N60C3中文資料HARRIS數(shù)據(jù)手冊PDF規(guī)格書

P12N60C3
廠商型號

P12N60C3

功能描述

24A, 600V, UFS Series N-Channel IGBTs

文件大小

131.23 Kbytes

頁面數(shù)量

6

生產(chǎn)廠商 Harris Corporation
企業(yè)簡稱

HARRIS

中文名稱

Harris Corporation

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-1-18 16:46:00

P12N60C3規(guī)格書詳情

Description

The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.

Features

? 24A, 600V at TC = 25°C

? 600V Switching SOA Capability

? Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150°C

? Short Circuit Rating

? Low Conduction Loss

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