零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
P12N60C3 | 24A, 600V, UFS Series N-Channel IGBTs Description TheHGTP12N60C3,HGT1S12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchl | HARRIS Harris Corporation | HARRIS | |
24A,600V,UFSSERIESN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODE TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode24A,600V TheHGTG12N60C3DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThedevicehasthehighinputimpedanceofaMOSFET andthelowon?stateconductionlossofabipolartransistor.Themuch loweron?statevoltagedropvariesonlymoder | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode24A,600V TheHGTG12N60C3DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThedevicehasthehighinputimpedanceofaMOSFET andthelowon?stateconductionlossofabipolartransistor.Themuch loweron?statevoltagedropvariesonlymoder | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
24A,600V,UFSSERIESN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODE TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | Intersil Intersil Corporation | Intersil | ||
24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode Description TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarieso | HARRIS Harris Corporation | HARRIS | ||
24A,600V,UFSSeriesN-ChannelIGBTs TheHGTP12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
24A,600V,UFSSeriesN-ChannelIGBTs Description TheHGTP12N60C3,HGT1S12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchl | HARRIS Harris Corporation | HARRIS | ||
24A,600V,UFSSeriesN-ChannelIGBTs TheHGTP12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | Intersil Intersil Corporation | Intersil | ||
24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatelybetwee | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatelybetwee | Intersil Intersil Corporation | Intersil |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
VISHAY |
9856 |
TO-220 |
1812 |
只做進口原裝現(xiàn)貨!假一賠十! |
詢價 | ||
S |
23+ |
TO-220 |
10000 |
公司只做原裝正品 |
詢價 | ||
S |
TO-220 |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
S |
23+ |
TO-220 |
6000 |
原裝正品,支持實單 |
詢價 | ||
ST |
23+ |
TO-220 |
16900 |
正規(guī)渠道,只有原裝! |
詢價 | ||
ST |
TO-220 |
36900 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ST |
22+ |
TO-220 |
16900 |
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持! |
詢價 | ||
PHILIPS/飛利浦 |
2018 |
DIP |
1000 |
詢價 | |||
ST/進口原 |
17+ |
TO-220 |
6200 |
詢價 | |||
ST |
20+ |
TO-220 |
38560 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 |
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