首頁 >P25Q06LA-NXH-KT>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
P25Q06LA-NXH-KT | Ultra Low Power, 2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | |
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,2M/1M/512K-bit 2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導體(上海)股份有限公司 | PUYA |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
PUYA/普冉 |
2024+ |
SOP-8 |
188600 |
全新原廠原裝正品現貨 歡迎咨詢 |
詢價 | ||
普冉 |
23+ |
SOP |
59600 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
PUYA |
18+ |
SOP8 |
193 |
全新原裝只做自己庫存只做原裝 |
詢價 | ||
PUYA/普冉 |
2023 |
TSSOP8盤 |
3392 |
原廠代理渠道,正品保障 |
詢價 | ||
PURA |
23+ |
SOP8 |
50000 |
全新原裝正品現貨,支持訂貨 |
詢價 | ||
PURA |
2022 |
SOP8 |
80000 |
原裝現貨,OEM渠道,歡迎咨詢 |
詢價 | ||
PURA |
21+ |
SOP8 |
9866 |
詢價 | |||
PURA |
22+ |
SOP8 |
34430 |
鄭重承諾只做原裝進口現貨 |
詢價 | ||
PURA |
23+ |
SOP-8 |
89630 |
當天發(fā)貨全新原裝現貨 |
詢價 | ||
PURA |
23+ |
NA/ |
15050 |
原廠直銷,現貨供應,賬期支持! |
詢價 |
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