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P25Q06LA-NXH-KY

Ultra Low Power, 2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-SSH-IR

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-SSH-IT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-SSH-IW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-SSH-IY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-SSH-KR

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-SSH-KT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-SSH-KW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-SSH-KY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-SUH-IR

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-SUH-IT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-SUH-IW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-SUH-IY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-WFH-IR

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-WFH-IT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-WFH-IW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-WFH-IY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-WFH-KR

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-WFH-KT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q06LA-WFH-KW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
PUYA/普冉
2024+
SOP-8
188600
全新原廠原裝正品現(xiàn)貨 歡迎咨詢
 詢價
普冉
23+
SOP
59600
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
PUYA
18+
SOP8
193
全新原裝只做自己庫存只做原裝
 詢價
PUYA/普冉
2023
TSSOP8盤
3392
原廠代理渠道,正品保障
 詢價
PURA
23+
SOP8
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
PURA
2022
SOP8
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
PURA
21+
SOP8
9866
詢價
PURA
22+
SOP8
34430
鄭重承諾只做原裝進口現(xiàn)貨
 詢價
PURA
23+
SOP-8
89630
當天發(fā)貨全新原裝現(xiàn)貨
 詢價
PURA
23+
NA/
15050
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
 詢價
更多P25Q06LA-NXH-KY供應(yīng)商 更新時間2024-12-24 11:24:00

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