首頁 >PB125N60LT>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=29A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=125mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Telecom/SeverPowerSupplies | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
Telecom/SeverPowerSupplies | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
600VN-ChannelSuperJunctionMOSFET Feature: ?RDS(ON)Max,VGS@10V:125mΩ ?FastrecoveryQrr/Trrperformance ?HighSpeedSwitchingandLowRDS(ON) ?100AvalancheTested ?100RgTested ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249standard | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
EFSeriesPowerMOSFETWithFastBodyDiode FEATURES ?4thgenerationEseriestechnology ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 AP | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
EFSeriesPowerMOSFETWithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
EFSeriesPowerMOSFETWithFastBodyDiode FEATURES ?4thgenerationEseriestechnology ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 AP | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
EFSeriesPowerMOSFETWithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
ESeriesPowerMOSFET FEATURES ?4thgenerationEseriestechnology ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 AP | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
EFSeriesPowerMOSFETWithFastBodyDiode FEATURES ?4thgenerationEseriestechnology ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Co(er)) ?Reducedswitchingandconductionlosses ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 AP | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
EFSeriesPowerMOSFETWithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
24+ |
N/A |
3520 |
詢價 | ||||
ELECTROSWITCH |
20+ |
開關元件 |
96 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Electroswitch |
22+ |
NA |
168 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
原廠 |
16+ |
原廠封裝 |
10000 |
全新原裝正品,代理優(yōu)勢渠道供應,歡迎來電咨詢 |
詢價 | ||
ElectroswitchInc. |
新 |
333 |
全新原裝 貨期兩周 |
詢價 | |||
Electroswitch Inc. |
2022+ |
329 |
全新原裝 貨期兩周 |
詢價 |
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