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PBRN123Y

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123Y

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 10 k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN123Y_SER

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123YK

Marking：G7；Package：SC-59A；NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123YS

Marking：N123YS；Package：SC-43A；NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123YT

Marking：7P；Package：SOT23；NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123YT

Marking：7P；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123YT 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123YT-Q

Marking：7P；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123YT-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123YK

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 10 k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN123YS

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 10 k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    PBRN123Y

  • 制造商：

    PHILIPS

  • 制造商全稱：

    NXP Semiconductors

  • 功能描述：

    NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?, R2 = 10 k?

供應(yīng)商型號品牌批號封裝庫存備注價格
NXP
24+
6000
詢價
Nexperia
24+
NA
3000
進口原裝正品優(yōu)勢供應(yīng)
 詢價
Nexperia/安世
17+
SOT-23
3000
原裝正品現(xiàn)貨,可開發(fā)票,假一賠十
 詢價
NXP/恩智浦
24+
QFN
1310
原裝現(xiàn)貨100%現(xiàn)貨
 詢價
Nexperia(安世)
2447
TO-236AB-3
105000
3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
NEXPERIA
1809+
SOT23-3
6675
就找我吧!--邀您體驗愉快問購元件!
 詢價
NXP(恩智浦)
23+
NA
20094
正納10年以上分銷經(jīng)驗原裝進口正品做服務(wù)做口碑有支持
 詢價
NEXPERIA/安世
23+
SOT23
6000
原裝正品假一罰百!可開增票!
 詢價
NEXPERIA/安世
23+
SOT-23
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NXP
22+
NA
45000
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
更多PBRN123Y供應(yīng)商 更新時間2025-5-4 15:30:00

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