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PBSS306NZ

100V,5.1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS306PZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS306NZ

100V,5.1ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS306NZ-Q

100V,5.1ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS306PZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS306PX

100V,3.7APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT89(SC-62/TO-243)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS306NX. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapabili

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS306PX

100V,3.7APNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS306PZ

100V,4.1APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS306NZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS306PZ

100V,4.1APNPlowVCEsat(BISS)transistor

Featuresandbenefits ?Lowcollector-emittersaturation voltageVCEsat ?Highcollectorcurrentcapability ICandICM ?Highcollectorcurrentgain(hFE)at highIC ?Highefficiencyduetolessheat generation ?SmallerPrinted-CircuitBoard(PCB) areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS306PZ-Q

100V,4.1APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS306NZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBY306

Silicon-PowerRectifiers

Silicon-PowerRectifiers ?Nominalcurrent35A ?Repetitivepeakreversevoltage50~1000V ?MetalcaseDO-5 ?Weightapprox.6g ?Standardpolarity:Cathodetostud ?IndexR:Anodetostud ?Standardpackaging:bulk

Diotec

Diotec Semiconductor

PBY306

Silicon-Power-Rectifiers

Diotec

Diotec Semiconductor

PCH-W306

4-slotWallmountChassis

PROTECHSYSTEMS

Protech Systems Co., Ltd.

PE306

SMAFemaletoNMalePrecisionCableUsing160SeriesCoax,RoHS

PASTERNACK

Pasternack Enterprises, Inc.

PFFM306

3.0ASUFRACEMOUNTFASTRECOVERYRECTIFIERS-50-1000V

PACELEADERPACELEADER INDUSTRIAL

霈峰霈峰實業(yè)有限公司

PG306R

GLASSPASSIVATEDJUNCTIONFASTSWITCHINGRECTIFIER(VOLTAGE-50to800VoltsCURRENT-3.0Amperes)

VOLTAGE50to1000VoltCURRENT3Ampere FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?Glasspassivatedjunction ?Fastswitchingforhighefficiency. ?LeadfreeincompliancewithEURoHS

PANJITPan Jit International Inc.

強茂股份有限公司

PG306R

GLASSPASSIVATEDJUNCTIONFASTSWITCHINGRECTIFIERS

PANJITPan Jit International Inc.

強茂股份有限公司

PG306R

GLASSPASSIVATEDJUNCTIONFASTSWITCHINGRECTIFIERS

PANJITPan Jit International Inc.

強茂股份有限公司

PG306R

3A600VFastrecoverydiode

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

PDF上傳者：深圳市福田區(qū)吉富昌電子商行

PG306R

GLASSPASSIVATEDJUNCTIONFASTSWITCHINGRECTIFIER

FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-OUtilizing FlameRetardantEpoxyMoldingCompound ?GlasspassivatedjunctioninaDO-201ADpackage ?3ampereoperationatTA=55°Cwithnothermalrunaway ?Exceedsenvironmentalstanda

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯電子深圳市泰迪斯電子科技有限公司

PG306R

3.0AGLASSPASSIVATEDFASTRECOVERYDIODE

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

PHFM306

3.0ASurfaceMountHighEffciencyRectifiers-50V-1000V

FEATURES *Glasspassivateddevice *Idealforsurfacemountedapplications *Lowleakagecurrent *Metallurgicallybondedconstruction *MoistureSensitivityLevel1 *Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG Halohenfreeproductforpackingcodesuffix

PACELEADERPACELEADER INDUSTRIAL

霈峰霈峰實業(yè)有限公司

詳細(xì)參數(shù)

  • 型號：

    PBSS306NX T/R

  • 功能描述：

    兩極晶體管 - BJT TRANS BISS TAPE-7

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    PNP 集電極—基極電壓

  • VCBO：

    集電極—發(fā)射極最大電壓

  • VCEO：

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO：

    - 6 V

  • 增益帶寬產(chǎn)品fT：

    直流集電極/Base Gain hfe

  • Min：

    100 A

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    PowerFLAT 2 x 2

供應(yīng)商型號品牌批號封裝庫存備注價格
NEXPERIA
1809+
SOT-89-3
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
Nexperia
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
Nexperia USA Inc.
24+
TO-243AA
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
NXP/恩智浦
23+
SOT89
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NXP/恩智浦
2022
SOT89
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
NXP/恩智浦
22+
SOT89
62420
鄭重承諾只做原裝進口現(xiàn)貨
 詢價
NXP
17+
SOT-223
6200
100%原裝正品現(xiàn)貨
 詢價
NXP
2020+
SOT233
290
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
NXP
16+
NA
8800
誠信經(jīng)營
 詢價
NXP
24+
SOT223
5000
只做原裝公司現(xiàn)貨
 詢價
更多PBSS306NX T/R供應(yīng)商 更新時間2021-9-14 10:50:00

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