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PBSS4350

50 V low VCEsat NPN transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT54plasticpackage.PNPcomplement:PBSS5350S. FEATURES ?Highpowerdissipation(830mW) ?Ultralowcollector-emittersaturationvoltage ?3Acontinuouscurrent ?Highcurrentswitching ?Improveddevicereliabilityduetoreducedheatgenerat

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS4350

NPN transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT457(SC-74)plasticpackage.PNPcomplement:PBSS5350D. FEATURES ?Lowcollector-emittersaturationvoltage ?Highcurrentcapability ?Improveddevicereliabilityduetoreducedheatgeneration ?ReplacementforSOT89/SOT223standar

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS4350D

NPN transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT457(SC-74)plasticpackage.PNPcomplement:PBSS5350D. FEATURES ?Lowcollector-emittersaturationvoltage ?Highcurrentcapability ?Improveddevicereliabilityduetoreducedheatgeneration ?ReplacementforSOT89/SOT223standar

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS4350D

50 V low VCEsat NPN transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT457(SC-74)plasticpackage.PNPcomplement:PBSS5350D. FEATURES ?Lowcollector-emittersaturationvoltage ?Highcurrentcapability ?Improveddevicereliabilityduetoreducedheat generation ?ReplacementforSOT89/SOT223standardpackage

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBSS4350D

50 V low VCEsat NPN transistor

FEATURES ?Lowcollector-emittersaturationvoltage ?Highcurrentcapability ?Improveddevicereliabilityduetoreducedheatgeneration ?ReplacementforSOT89/SOT223standardpackagedtransistorsduetoenhancedperformance. APPLICATIONS ?Supplylineswitchingcircuits ?Batterymanagement

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS4350PAS

50 V, 3 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsatDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS5350PAS 2.Featuresandbenefits ?DFN2020D-3(SOT1061D)package ?Lowcollector-emittersaturationvoltageVCEsat ?Highcollectorcurrentcapabili

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS4350PAS-Q

50 V, 3 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsatDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS5350PAS-Q 2.Featuresandbenefits ?DFN2020D-3(SOT1061D)package ?Lowcollector-emittersaturationvoltageVCEsat ?Highcollectorcurrentcapabi

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS4350S

50 V low VCEsat NPN transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT54plasticpackage.PNPcomplement:PBSS5350S. FEATURES ?Highpowerdissipation(830mW) ?Ultralowcollector-emittersaturationvoltage ?3Acontinuouscurrent ?Highcurrentswitching ?Improveddevicereliabilityduetoreducedheatgenerat

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS4350SPN

50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor

Generaldescription PNP/PNPdoublelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBSS4350SPN

50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS4350SPN

50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS4350SS

50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor

Generaldescription PNP/PNPdoublelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBSS4350SS

50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS4350SS

50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS4350SS.115

NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

Generaldescription PNP/PNPdoublelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain(

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBSS4350T

50 V; 3 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT23plasticpackage.PNPcomplement:PBSS5350T. FEATURES ?Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat ?Highcollectorcurrentcapability ?Highcollectorcurrentgain ?Improvedefficiencyduetoreducedheatgene

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS4350T

50 V; 3 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT23plasticpackage.PNPcomplement:PBSS5350T. FEATURES ?Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat ?Highcollectorcurrentcapability ?Highcollectorcurrentgain ?Improvedefficiencyduetoreducedheatgene

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBSS4350T

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting,LCDback-lighting,supplylineswitchingcircuits.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

PBSS4350T

50 V; 3 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS5350T 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat ?Highcollectorcurrentcapability

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS4350T-Q

50 V; 3 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS5350T-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat ?Highcollectorcurrentcapability

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

詳細參數(shù)

  • 型號:

    PBSS4350

  • 制造商:

    PHILIPS

  • 制造商全稱:

    NXP Semiconductors

  • 功能描述:

    50 V low VCEsat NPN transistor

供應商型號品牌批號封裝庫存備注價格
NXP/恩智浦
24+
SOT-223
20000
只做原廠渠道 可追溯貨源
詢價
NXPLIP
12+
TO-223
15000
全新原裝,絕對正品,公司現(xiàn)貨供應。
詢價
NXP
23+
SOT-223
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
NXP
18+
TO-92
85600
保證進口原裝可開17%增值稅發(fā)票
詢價
NXP
2020+
SOT-223
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
NXP
2023+
SOT-223
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
NXP
24+
SOT-223
35200
一級代理/放心采購
詢價
NXP
08+
SOT-223
20000
普通
詢價
NXPLIP
21+
TO-223
30000
只做正品原裝現(xiàn)貨
詢價
NXP/恩智浦
22+
SOT-23
35000
原裝正品
詢價
更多PBSS4350供應商 更新時間2025-1-8 16:36:00