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PDTB113E

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTB113EK

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB113EQA

50 V, 500 mA NPN resistor-equipped transistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB113EQA

50 V, 500 mA PNP resistor-equipped transistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB113EQA

50 V, 500 mA PNP resistor-equipped transistors

1.1Generaldescription PNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3 (SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderable sidepads. 1.2Featuresandbenefits 1.3Applications Table1.Productoverview TypenumberR1R2Pac

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB113EQA_SER

50 V, 500 mA PNP resistor-equipped transistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB113ES

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB113ET

PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ

Featuresandbenefits *500mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB113ET

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB113EU

500 mA, 50 V PNP resistor-equipped transistors

Generaldescription PNPResistor-EquippedTransistor(RET)familyinaverysmallSOT323(SC-70)Surface-MountedDevice(SMD)plasticpackage. Features ■500mAoutputcurrentcapability ■±10resistorratiotolerance ■Built-inbiasresistors ■AEC-Q101qualified ■Simplifiescircuitd

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB113EU

500 mA, 50 V NPN resistor-equipped transistors

Features ?500mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ??10resistorratiotolerance ?AEC-Q101qualified ?Hightemperatureapplications upto175°C

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB113EU

500 mA, 50 V PNP resistor-equipped transistors

Features ?500mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ??10resistorratiotolerance ?AEC-Q101qualified ?Hightemperatureapplications upto175°C

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB113EK

Low VCEsat (BISS) transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTB113EK

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTB113EQA

50 V, 500 mA PNP resistor-equipped transistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB113ES

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTB113ET

Low VCEsat (BISS) transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTB113ET

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTB113EQAZ

包裝:卷帶(TR) 封裝/外殼:3-XDFN 裸露焊盤 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極(BJT)- 單,預(yù)偏置 描述:TRANS PREBIAS PNP 3DFN

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTB113ES,126

包裝:剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-226-3,TO-92-3(TO-226AA)成形引線 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極(BJT)- 單,預(yù)偏置 描述:TRANS PREBIAS PNP 500MW TO92-3

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    PDTB113E

  • 功能描述:

    開關(guān)晶體管 - 偏壓電阻器 TRANS RET TAPE-7

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 晶體管極性:

    NPN/PNP

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    直流集電極/Base Gain hfe

  • Min:

    200 mA

  • 最大工作頻率:

    集電極—發(fā)射極最大電壓

  • VCEO:

    50 V

  • 集電極連續(xù)電流:

    150 mA

  • 功率耗散:

    200 mW

  • 封裝:

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NXP
24+
3000
詢價(jià)
NXP
2020+
SOT23
219
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價(jià)
Nexperia
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190
詢價(jià)
NXP
23+
SOT23
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
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Nexperia/安世
22+
SOT23
330000
原廠原裝正品現(xiàn)貨
詢價(jià)
Nexperia(安世)
2117+
SOT-323
315000
一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨
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NEXPERIA/安世
21+
SOT23
30000
原裝現(xiàn)貨假一賠十
詢價(jià)
NEXPERIA
1809+
DFN-3
16750
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
NXP USA Inc.
21+
NA
12000
正品專賣,進(jìn)口原裝深圳現(xiàn)貨
詢價(jià)
NXP US
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
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更多PDTB113E供應(yīng)商 更新時(shí)間2024-11-15 15:30:00