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PDTC143ES

NPN resistor-equipped transistor

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC143ES

NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC143ES,126

包裝:剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-226-3,TO-92-3(TO-226AA)成形引線 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極(BJT)- 單,預(yù)偏置 描述:TRANS PREBIAS NPN 500MW TO92-3

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC143ET

LowVCEsat(BISS)transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC143ET

NPNresistor-equippedtransistor

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC143ET

NPNresistor-equippedtransistors;R1=4.7k廓,R2=4.7k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC143ET

50V,100mANPNresistor-equippedtransistor;R1=4.7kΩ,R2=4.7kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:PDTA143ET 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducesco

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC143ET

PNPresistor-equippedtransistors;R1=4.7k?,R2=4.7k?

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC143ET-Q

50V,100mANPNresistor-equippedtransistor;R1=4.7kΩ,R2=4.7kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:PDTA143ET 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducesco

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC143EU

NPNresistor-equippedtransistor

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC143EU

NPNresistor-equippedtransistors;R1=4.7k廓,R2=4.7k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC143EU

LowVCEsat(BISS)transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC143EU

50V,100mANPNresistor-equippedtransistor;R1=4.7kΩ,R2=4.7kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inaverysmallSOT323(SC-70)Surface-Mounted Device(SMD)plasticpackage. PNPcomplement:PDTA143EU 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reduces

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC143EU

PNPresistor-equippedtransistors;R1=4.7k?,R2=4.7k?

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC143EU-Q

50V,100mANPNresistor-equippedtransistor;R1=4.7kΩ,R2=4.7kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inaverysmallSOT323(SC-70)Surface-Mounted Device(SMD)plasticpackage. PNPcomplement:PDTA143EU 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reduces

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC143T

NPNresistor-equippedtransistors;R1=4.7kOHM,R2=open

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC143T

NPNresistor-equippedtransistors;R1=4.7k廓,R2=open

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTC143T

NPNresistor-equippedtransistors;R1=4.7kΩ,R2=open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitapplications.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC143T_SER

NPNresistor-equippedtransistorsR1=4.7kΩ,R2=open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitapplications. DESCRIPTION NPNresistor-equippedtransistor(see“S

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC143T_SERIES

NPNresistor-equippedtransistors;R1=4.7kΩ,R2=open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitapplications.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細參數(shù)

  • 型號:

    PDTC143ES

  • 功能描述:

    開關(guān)晶體管 - 偏壓電阻器 TRANS RET AMMO RADIAL

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 晶體管極性:

    NPN/PNP

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    直流集電極/Base Gain hfe

  • Min:

    200 mA

  • 最大工作頻率:

    集電極—發(fā)射極最大電壓

  • VCEO:

    50 V

  • 集電極連續(xù)電流:

    150 mA

  • 功率耗散:

    200 mW

  • 封裝:

    Reel

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PHI
95+
SOT
44
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PHI
22+23+
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9769
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PHILIPS
2023+
80000
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PHILIPS/飛利浦
22+
SOT
9600
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PHILIPS/飛利浦
22+
SOT
6550
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PHILIPS/飛利浦
23+
SOT
89630
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NXP
22+
NA
45000
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NXP USA Inc.
2022+
TO-92-3
38550
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NXP USA Inc.
24+
TO-226-3 TO-92-3(TO-226AA)
9350
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PHILIPS
24+
3000
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更多PDTC143ES供應(yīng)商 更新時間2024-11-15 14:04:00