| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
PJ13007 | NPN Epitaxial Silicon Transistor | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | |
NPN Epitaxial Silicon Transistor | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
ADSLLINETRANSFORMER | PRODUCTWELL Productwell Precision Elect.CO.,LTD | PRODUCTWELL | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR [SemiWell] GeneralDescription Thisdeviceisdesignedforhighvoltage,highspeedswitchingcharacteristicrequiredsuchaslightingsystem,switchingmodepowersupply. Features -VeryHighSwitchingSpeed(Typical60ns@5.0A) -MinimumLot-to-LothFEVariation -LowVCE(sat)(Typical390m | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription Thisdeviceisdesignedforhighvoltage,Highspeedswitchingcharacteristicsrequiredsuchaslightingsystem,switchingmodepowersupply. Features ◆VeryHighSwitchingSpeed ◆HighVoltageCapability ◆WideReverseBiasSOA ◆IsolationVoltage(VISO=4000VAC) | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription Thisdevicesisdesignedforhighvoltage,highspeedswitchingcharacteristicrequiredsuchaslightingsystem,switchingmodepowersupply. Features -VeryHighSwitchingSpeed(Typical60ns@5.0A) -MinimumLot-to-LothFEVariation -LowVCE(sat)(Typical390mV@5.0A/1.0A | semiWell SemiWell Semiconductor | semiWell | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription ThisDeviceisdesignedforhighvoltage,Highspeedswitchingcharacteristicsrequiredsuchaslightingsystem,switchingmodepowersupply. Features ◆VeryHighSwitchingSpeed ◆HighVoltageCapability ◆WideReverseBiasSOA | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription Thisdeviceisdesignedforhighvoltage,highspeedswitchingcharacteristicrequiredsuchaslightingsystem,switchingmodepowersupply. Features -VeryHighSwitchingSpeed(Typical60ns@5.0A) -MinimumLot-to-LothFEVariation -LowVCE(sat)(Typical390mV@5.0A/1.0A | semiWell SemiWell Semiconductor | semiWell | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription ThisDeviceisdesignedforhighvoltage,Highspeedswitchingcharacteristicsrequiredsuchaslightingsystem,switchingmodepowersupply. Features ◆VeryHighSwitchingSpeed ◆MinimumLot-to-LothFEVariation ◆WideReverseBiasSOA ◆Built-infreewheelingdiode | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription Thisdeviceisdesignedforhighvoltage,Highspeedswitchingcharacteristicsrequiredsuchaslightingsystem,switchingmodepowersupply. Features ◆VeryHighSwitchingSpeed ◆HighVoltageCapability ◆WideReverseBiasSOA | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription Thisdeviceisdesignedforhighvoltage,Highspeedswitchingcharacteristicsrequiredsuchaslightingsystem,switchingmodepowersupply. Features ◆VeryHighSwitchingSpeed ◆HighVoltageCapability ◆WideReverseBiasSOA | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription Thisdevicesisdesignedforhighvoltage,highspeedswitchingcharacteristic,especiallysuitableforballastsysytem. Features -HighSwitchingSpeed -Shortstorgetime -WideReverseBiasS.O.A | semiWell SemiWell Semiconductor | semiWell | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription Thisdevicesisdesignedforhighvoltage,highspeedswitchingcharacteristic,especiallysuitableforballastsysytem. Features -HighSwitchingSpeed -Shortstorgetime -WideReverseBiasS.O.A | semiWell SemiWell Semiconductor | semiWell | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription ThisDeviceisdesignedforhighvoltage,Highspeedswitchingcharacteristicsrequiredsuchaslightingsystem,switchingmodepowersupply. Features ◆VeryHighSwitchingSpeed ◆HighVoltageCapability ◆WideReverseBiasSOA | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
HighVoltageFast-SwitchingNPNPowerTransistor GeneralDescription ThisDeviceisdesignedforhighvoltage,Highspeedswitchingcharacteristicsrequiredsuchaslightingsystem,switchingmodepowersupplyandinvertersmotorcontrols Features ◆VeryHighSwitchingSpeed ◆HighVoltageCapability ◆WideReverseBiasSOA | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhigh switchingspeedsandhighvoltagecapability.Itusesacellularemitterstructurewithplanar edgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Features ?DCcurr | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
NPNSiliconTransistor forhighvoltage,high-speedpowerswitchingapplication | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半導體先之科半導體科技（東莞）有限公司 | SEMTECH_ELEC | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability. ItusesaCellularEmitterstructuretoenhanceswitchingspeeds. ■IMPROVEDSPECIFICATION: -LOWERLEAKAGECURRENT -TIGHTERGAINRANGE | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability.ItusesaCellularEmitterstructuretoenhanceswitchingspeeds. ■IMPROVEDSPECIFICATION: -LOWERLEAKAGECURRENT -TIGHTERGAINRANGE | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability.TheyuseaCellularEmitterstructuretoenhanceswitchingspeeds. ■HIGHVOLTAGECAPABILITY ■NPNTRANSISTOR ■LOWSPREADOFDYNAMICPARAMETERS ■ | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS |
詳細參數(shù)
- 型號：
PJ13007
- 功能描述：
NPN Epitaxial Silicon Transistor
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
PJ |
18+ |
SOP8/DI |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
PJ |
2018+ |
SOP8DIP8 |
393428 |
電源IC原裝正品有優(yōu)勢 |
詢價 | ||
PJ |
23+ |
SOP8DIP8 |
18500 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
PJ |
2015+ |
SOT23-5 |
26998 |
專業(yè)代理背光驅(qū)動IC,型號齊全,公司優(yōu)勢產(chǎn)品 |
詢價 | ||
PJ |
24+ |
SOT23-5 |
33000 |
原裝現(xiàn)貨 |
詢價 | ||
PJ |
22+ |
SOT-25 |
25000 |
只有原裝原裝,支持BOM配單 |
詢價 | ||
PJ |
23+ |
SOT-25 |
50000 |
只做原裝正品 |
詢價 | ||
PJ |
2310+ |
SOT23-5 |
34960 |
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨 |
詢價 | ||
PJ |
22+ |
SOT23-5 |
30000 |
十七年VIP會員,誠信經(jīng)營，一手貨源，原裝正品可零售！ |
詢價 | ||
PJ |
2023+ |
SOT23-5 |
3000 |
一級代理優(yōu)勢現(xiàn)貨,全新正品直營店 |
詢價 |
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