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PJF10N60

600V N-Channel Enhancement Mode MOSFET

FEATURES ?10A,600V,RDS(ON)=1.0?@VGS=10V,ID=5.0A ?LowONResistance ?FastSwitching ?LowGateCharge ?FullyCharacterizedAvalancheVoltageandCurrent ?SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS ?IncompliancewithEURoHs2002/95/ECDirectives

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PJP10N60

600VN-ChannelEnhancementModeMOSFET

FEATURES ?10A,600V,RDS(ON)=1.0?@VGS=10V,ID=5.0A ?LowONResistance ?FastSwitching ?LowGateCharge ?FullyCharacterizedAvalancheVoltageandCurrent ?SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS ?IncompliancewithEURoHs2002/95/ECDirectives

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

RMP10N60HD

N-CHANNELENHANCEMENTMODEPOWERMOSFET

100%AvalancheTest FastSwitchingCharacteristic SimpleDriveRequirement RoHSCompliant&Halogen-Free

RECTRON

Rectron Semiconductor

SDF10N60

SuperhighdensecelldesignforlowRDS(ON).

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

SFF10N60

N-ChannelMOSFET

semiWell

SemiWell Semiconductor

SGB10N60

HighSpeed2-Technology

?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGB10N60

FastS-IGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGB10N60A

FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGB10N60A

FastIGBTinNPT-technology

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGH10N60RUF

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswher

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    PJF10N60

  • 制造商：

    PANJIT

  • 制造商全稱：

    Pan Jit International Inc.

  • 功能描述：

    600V N-Channel Enhancement Mode MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
PANJIT/強(qiáng)茂
23+
ITO-220AB
286000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
PANJIT
TO-220F
22+
6000
十年配單,只做原裝
 詢價
PANJIT
23+
TO-220F
6000
原裝正品，支持實單
 詢價
PANJIT
22+
TO-220F
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價
PANJIT
25+
TO-TO-220F
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
PANJIT
24+
TO-220F
12000
12A650V原裝正品
 詢價
PANJIT
100
詢價
KEYEBCE
24+
DIP
6000
詢價
更多PJF10N60供應(yīng)商 更新時間2025-5-5 9:30:00

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