LF353N 【◆強(qiáng)勢代理 ◆】【◆全新原裝現(xiàn)貨◆】

原廠料號(hào)：LF353N品牌：TI

LF353-N

SNOSBH3F –APRIL 1998–REVISED MARCH 2013 www.ti.com

DC Electrical acteristics

LF353-N

Symbol Parameter Conditions Units

MIn Typ Max

VOS Input Offset Voltage RS=10kΩ, TA=25°C 5 10 mV

Over Temperature 13 mV

ΔVOS/ΔT Average TC of Input Offset Voltage RS=10 kΩ 10 μV/°C

IOS Input Offset Current Tj=25°C

(1)(2) 25 100 pA

Tj≤70°C 4 nA

IB Input Bias Current Tj=25°C

(1)(2) 50 200 pA

Tj≤70°C 8 nA

RIN Input Resistance Tj=25°C 1012 Ω

AVOL Large Signal Voltage Gain VS=±15V, TA=25°C 25 100 V/mV

VO=±10V, RL=2 kΩ

Over Temperature 15 V/mV

VO Output Voltage Swing VS=±15V, RL=10kΩ ±12 ±13.5 V

VCM Input Common-Mode Voltage VS=±15V ±11 +15 V

Range 12 V

CMRR Common-Mode Rejection Ratio RS≤ 10kΩ 70 100 dB

PSRR Supply Voltage Rejection Ratio See(3) 70 100 dB

IS Supply Current 3.6 6.5 mA

(1) These specifications apply for VS=±15V0°C≤TA≤+70°C. VOS, IBand IOS are measured at VCM=0.

(2) The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature,

Tj

. Due to the limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation

the junction temperature rises above the ambient temperature as a result of internal power dissipation, PD. Tj=TA+θjA PD where θjA is the

thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum.

(3) Supply voltage rejection ratio is measured for both supply magnitudes increasingdecreasing simultaneously in accordance with

• 芯片型號(hào)：

  LF353N

• 規(guī)格書：

  下載

• 企業(yè)簡稱：

  TI1【德州儀器】詳情

• 廠商全稱：

  Texas Instruments

• 內(nèi)容頁數(shù)：

  16 頁

• 文件大?。?/span>

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• 資料說明：

  LF353 Wide Bandwidth Dual JFET Input Operational Amplifier