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首頁(yè) >PSB-3636>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
PSB-3636	文件：71.46 Kbytes Page：2 Pages	SPLIT BOBBIN HIGH ISOLATION POWER TRANSFORMERS	PMI Premier Magnetics, Inc.	PMI
PSB-3636D	文件：71.46 Kbytes Page：2 Pages	SPLIT BOBBIN HIGH ISOLATION POWER TRANSFORMERS	PMI Premier Magnetics, Inc.	PMI
PST3636NR	文件：155.25 Kbytes Page：20 Pages	ICforCMOSSystemReset	MITSUMIMitsumi Electronics, Corp. 三美三美電機(jī)株式會(huì)社	MITSUMI
PST3636UR	文件：155.25 Kbytes Page：20 Pages	ICforCMOSSystemReset	MITSUMIMitsumi Electronics, Corp. 三美三美電機(jī)株式會(huì)社	MITSUMI
PT3636	文件：196.5 Kbytes Page：1 Pages	HighSensitivityUnipolarSwitch	PROLIFICProlific Technology Inc. 旺玖科技旺玖科技股份有限公司	PROLIFIC
PT3636	文件：196.5 Kbytes Page：1 Pages	3.8V~24Voperation	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2
RMQCBA3636DGBA	文件：849.61 Kbytes Page：30 Pages	36-MbitDDR??IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
RMQCEA3636DGBA	文件：416.34 Kbytes Page：31 Pages	36-MbitDDR?IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)withODT Description TheRMQCEA3636DGBAisa1,048,576-wordby36-bitandtheRMQCEA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
RMQCHA3636DGBA	文件：846.53 Kbytes Page：30 Pages	36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
RMQCLA3636DGBA	文件：885.33 Kbytes Page：30 Pages	36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
RMQSAA3636DGBA	文件：363.53 Kbytes Page：30 Pages	36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency) Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
RMQSDA3636DGBA	文件：403.69 Kbytes Page：31 Pages	36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)withODT Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
RMQSGA3636DGBA	文件：359.37 Kbytes Page：30 Pages	36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
RMQSKA3636DGBA	文件：399.71 Kbytes Page：31 Pages	36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)withODT Features PowerSupply 1.8Vforcore(VDD),1.4VtoVDDforI/O(VDDQ) Clock Fastclockcycletimeforhighbandwidth Twoinputclocks(Kand/K)forpreciseDDRtimingatclockrisingedgesonly Twooutputechoclocks(CQand/CQ)simplifydatacaptureinhigh-speedsystems	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
TPESD3636P	文件：1.26449 Mbytes Page：5 Pages	4=ChannelESDProtectionDiodeforUSBType=CandHDMI2.0 Features Ultralowcapacitance:0.25pFtypical(I/Oto1/0) Ultralowleakage:nAlevel BreakdownVoltage:5.5V(Minimum) Lowclampingvoitage Complieswithfollowingstandards: —\|IEC61000-4-2(ESD)immunitytest Airdischarge:+20kV Contactdischarge:+15kV —IEC61000-4-4(EFT)80A(	TECHPUBLICTECH PUBLIC Electronics co LTD 臺(tái)舟電子臺(tái)舟電子股份有限公司	TECHPUBLIC

詳細(xì)參數(shù)

型號(hào)：
PSB-3636
制造商：
PMI
制造商全稱：
PMI
功能描述：
SPLIT BOBBIN HIGH ISOLATION POWER TRANSFORMERS

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市易訊博科技有限公司	PSB363-7IR	Bel	22+	NA	80	加我QQ或微信咨詢更多詳細(xì)信息,	詢價(jià)
深圳市華來(lái)深電子有限公司	PSB3A0BA-1(X816690-001)	SIS	23+	BGA23*2	8650	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	PSB3A0BA-1(X816690-001)	SIS	23+	BGA2323	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市勝彬電子有限公司	PSB3A0BA-1(X816690-001)	SIS	22+	BGA23*23	3000	原裝正品,支持實(shí)單	詢價(jià)
深圳市晨豪科技有限公司	PSB3A0BA-1(X816690-001)	SIS	23+	BGA2323	89630	當(dāng)天發(fā)貨全新原裝現(xiàn)貨	詢價(jià)
深圳市得捷芯城科技有限公司	PSB3A0BA-1(X816690-001)	SIS	23+	NA/	3427	原廠直銷,現(xiàn)貨供應(yīng),賬期支持!	詢價(jià)
深圳市英科美電子有限公司	PSB3A0BA-1(X816690-001)	SIS	2223+	BGA2323	26800	只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)	詢價(jià)
上海市鑫鴻達(dá)電子	PSB3V	Wiremold	2022+		2	全新原裝貨期兩周	詢價(jià)
艾睿國(guó)際（香港）有限公司	PSB4/7/6	N/A	2021+	SMD	100500	一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	PSB4/7/6	Phoenix/菲尼克斯	23/24+	303299	1563	優(yōu)勢(shì)特價(jià) 原裝正品全產(chǎn)品線技術(shù)支持	詢價(jià)

更多PSB-3636供應(yīng)商更新時(shí)間2025-1-11 10:08:00

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