PSMN2R0-55YLH中文資料安世數(shù)據(jù)手冊(cè)PDF規(guī)格書

1. General description

200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET

in LFPAK56E package. Part of the ASFETs for Battery Isolation and DC Motor control family

and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking

performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode

but without problematic high leakage current. The ASFET is particularly suited to 36 V battery

powered applications requiring strong avalanche capability, linear mode performance, use at high

switching frequencies, and also safe and reliable switching at high load-current.

2. Features and benefits

? 200 A continuous current capability

? Optimised for 36 V (nominal) battery powered applications

? LFPAK56E low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy

solder-joint inspection

? Copper-clip and solder die attach for low package inductance and resistance, and high ID (max)

rating

? Qualified to 175 °C

? Avalanche rated, 100 tested

? Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies

? Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for

low EMI designs

? Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage

? Narrow VGS(th) rating for easy paralleling and improved current sharing

? Very strong linear-mode / safe operating area characteristics for safe and reliable switching at

high-current conditions

3. Applications

? Brushless DC motor control

? Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies

? Battery protection and Battery Management Systems (BMS)

? Load switch

? 10 cell lithium-ion battery applications (36 V ? 42 V)