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PT2312E

StereoAudioProcessorforCarAudio

PTCPrinceton Technology Corporation

普誠普誠科技

PT2312E

StereoAudioProcessorforCarAudio

DESCRIPTION ThePT2312Eisanaudioprocessordesignedforversatileapplication,includes4stereoinputselectorwith adjustablegain,mastervolumecontrolwithlowfrequencyloudnesscompensation,individualoutput attenuatorandtonecontrol.Itisagoodsolutionforthecaraudios

PTCPrinceton Technology Corporation

普誠普誠科技

PT2312E-S

StereoAudioProcessorforCarAudio

DESCRIPTION ThePT2312Eisanaudioprocessordesignedforversatileapplication,includes4stereoinputselectorwith adjustablegain,mastervolumecontrolwithlowfrequencyloudnesscompensation,individualoutput attenuatorandtonecontrol.Itisagoodsolutionforthecaraudios

PTCPrinceton Technology Corporation

普誠普誠科技

PT2312E-S

StereoAudioProcessorforCarAudio

PTCPrinceton Technology Corporation

普誠普誠科技

RF2312

LinearGeneralPurposeAmplifier

QORVO

Qorvo, Inc

RF2312

LINEARGENERALPURPOSEAMPLIFIER

RFMD

RF Micro Devices

RF2312

LINEARGENERALPURPOSEAMPLIFIER

ProductDescription TheRF2312isageneralpurpose,lowcosthighlinearityRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasilycascadable75Ωgainblock.Thegainflatnessof

RFMD

RF Micro Devices

RF2312

LINEARGENERALPURPOSEAMPLIFIER

RFMD

RF Micro Devices

RF2312PCBA

LINEARGENERALPURPOSEAMPLIFIER

RFMD

RF Micro Devices

RF2312PCBA

LINEARGENERALPURPOSEAMPLIFIER

ProductDescription TheRF2312isageneralpurpose,lowcosthighlinearityRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasilycascadable75Ωgainblock.Thegainflatnessof

RFMD

RF Micro Devices

RF2312PCK

LinearGeneralPurposeAmplifier

QORVO

Qorvo, Inc

RF2312SQ

LinearGeneralPurposeAmplifier

QORVO

Qorvo, Inc

RF2312SR

LinearGeneralPurposeAmplifier

QORVO

Qorvo, Inc

RM2312

N-ChannelEnhancementModePowerMOSFET

RECTRON

Rectron Semiconductor

RN2312

TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess)

Switching,InverterCircuit,InterfaceCircuitandDriverCircuit ●Withbuilt-inbiasresistors. ●Simplifycircuitdesign ●Reduceaquantityofpartsandmanufacturingprocessandminiaturizeequipment. ●Variousresistancevaluesareavailabletosuitvariouscircuitdesigns. ●Complement

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

RSZ-2312

1WattSMDMiniatureIsolatedSingleOutput

RECOM

Recom International Power

RSZ-2312HP

1WattSMDMiniatureIsolatedSingleOutput

RECOM

Recom International Power

S2312

SOT-23

SMCSangdest Microelectronic (Nanjing) Co., Ltd

燒結(jié)金屬

S2312

TVSARRAYSERIES

Protects3.3,5,12,15,24,36VComponents UnidirectionalorBidirectional LowLeakage ProvidesElectricallyIsolatedProtection 300W@8/20us Protects1or2Lines SOT-23Packaging “-A”isanAEC-Q101qualifieddevice ThisisaPb-FreeDevice AllSMCpartsaretraceabletothewafe

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件(南京)有限公司

SE2312

SOT-23Plastic-EncapsulateMOSFETS

WILLASWILLAS ELECTRONIC CORP

威倫威倫電子股份有限公司

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更多PT2312A供應(yīng)商 更新時間2025-1-14 17:26:00