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PTPS7H2211DAPTSEP

TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TI1Texas Instruments

德州儀器

PTPS7H2211DAPTSEP

TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse

1Features ?Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt

TI1Texas Instruments

德州儀器

TPS7H2211

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse

1Features ?Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt

TI1Texas Instruments

德州儀器

TPS7H2211

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TI1Texas Instruments

德州儀器

TPS7H2211EVM-CVAL

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse

1Features ?Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt

TI1Texas Instruments

德州儀器

TPS7H2211EVM-CVAL

TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TITexas Instruments

德州儀器美國(guó)德州儀器公司

TPS7H2211EVM-CVAL

TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

TITexas Instruments

德州儀器美國(guó)德州儀器公司

TPS7H2211EVM-CVAL

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TI1Texas Instruments

德州儀器

TPS7H2211HKR/EM

TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TITexas Instruments

德州儀器美國(guó)德州儀器公司

TPS7H2211HKR/EM

TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

TITexas Instruments

德州儀器美國(guó)德州儀器公司

TPS7H2211HKR/EM

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TI1Texas Instruments

德州儀器

TPS7H2211HKR/EM

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse

1Features ?Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt

TI1Texas Instruments

德州儀器

TPS7H2211MDAPTSEP

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse

1Features ?Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt

TI1Texas Instruments

德州儀器

TPS7H2211MDAPTSEP

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TI1Texas Instruments

德州儀器

TPS7H2211-SEP

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse

1Features ?Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt

TI1Texas Instruments

德州儀器

TPS7H2211-SEP

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TI1Texas Instruments

德州儀器

TPS7H2211-SP

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TI1Texas Instruments

德州儀器

TPS7H2211-SP

TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TITexas Instruments

德州儀器美國(guó)德州儀器公司

TPS7H2211-SP

TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

TITexas Instruments

德州儀器美國(guó)德州儀器公司

TPS7H2211-SP

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse

1Features ?Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt

TI1Texas Instruments

德州儀器

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TI
23+
5000
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TI
22+
CFP (HFT)
6000
原廠原裝,價(jià)格優(yōu)勢(shì)!13246658303
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TI
23+
QFN
50000
全新原裝正品現(xiàn)貨,支持訂貨
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TI
21+
QFN
13880
公司只售原裝,支持實(shí)單
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TI/德州儀器
23+
QFN
11200
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TI
1106+
QFN
1396
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TI/德州儀器
23+
QFN
1396
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TI
22
QFN
39890
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TI
23+
QFN
5000
全新原裝,支持實(shí)單,非誠(chéng)勿擾
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TI
QFN
699839
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更多PTPS7H2211DAPTSEP供應(yīng)商 更新時(shí)間2024-12-26 9:22:00