PXAD184218FV-V1-R2分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

PXAD184218FV-V1-R2屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由WOLFSPEED, INC.制造生產(chǎn)的PXAD184218FV-V1-R2晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

Description

The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical

design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path

design, input and output matching, high gain and thermally-enhanced

package with earless flanges. Manufactured with Wolfspeed's advanded

LDMOS process, this device provides excellent thermal performance and

superior reliability.

Features

? Broadband internal input and output matching

? Asymmetrical Doherty design

- Main : P1dB = 130 W Typ

- Peak : P1dB = 290 W Typ

? Typical Pulsed CW performance, 1842.5 MHz, 28 V,

Doherty configuration

- Output power at P3dB = 420 W

- Efficiency = 62

- Gain = 14 dB

? Capable of handling 10:1 VSWR @ 28 V, 110 W (WCDMA)

output power

? Integrated ESD protection

? Human Body Model class 2 (per ANSI/ESDA/

JEDEC JS-001)

? Low thermal resistance

? Pb-free and RoHS compliant