QJD1210011中文資料POWEREX數(shù)據(jù)手冊(cè)PDF規(guī)格書

Description:

Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency applications. Each module consists of two MOSFET Silicon Carbide Transistors with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Features:

□ Junction Temperature: 175°C

□ Silicon Carbide Chips

□ Low Internal Inductance

□ Industry Leading RDS(on)

□ High Speed Switching

□ Low Switching Losses

□ Low Capacitance

□ Low Drive Requirement

□ Fast 100A Free Wheeling Schottky Diode

□ High Power Density

□ Isolated Baseplate

□ Aluminum Nitride Isolation

□ 2 Individual Switches per Module

□ AlSiC Baseplate

□ RoHS Compliant

Applications:

□ Energy Saving Power Systems such as: Fans; Pumps; Consumer Appliances

□ High Frequency Type Power Systems such as: UPS; High Speed Motor Drives; Induction Heating; Welder; Robotics

□ High Temperature Power Systems such as: Power Electronics in Electric Vehicle and Aviation Systems