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CEA3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,5A,RDS(ON)=32m?@VGS=10V. RDS(ON)=45m?@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-89package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEA3252

N-Channel60-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFETs ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CED3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,25A,RDS(ON)=28m?@VGS=10V. RDS(ON)=39m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,7.5A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3252

N-Channel20V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?OptimizedforHigh-SideSynchronousRectifierOperation ?100RgTested ?100UISTested APPLICATIONS ?NotebookCPUCore -High-SideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CEM3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,7.5A,RDS(ON)=28mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3252L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,8A,RDS(ON)=29mΩ@VGS=10V. RDS(ON)=36mΩ@VGS=4.5V. RDS(ON)=55mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■Surfacemount

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3252L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,8A,RDS(ON)=29mW@VGS=10V. RDS(ON)=36mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. RDS(ON)=55mW@VGS=2.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,8A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=45mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3252

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IDT
24+
SMD
12200
新進(jìn)庫(kù)存/原裝
 詢價(jià)
IDT
24+
TO16
6000
原裝現(xiàn)貨假一罰十
 詢價(jià)
SMD
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價(jià)
IDT
23+
SOP
2800
絕對(duì)全新原裝!現(xiàn)貨!特價(jià)!請(qǐng)放心訂購(gòu)!
 詢價(jià)
QS
24+
SSOP
5000
絕對(duì)原裝自家現(xiàn)貨!真實(shí)庫(kù)存!歡迎來(lái)電!
 詢價(jià)
IDT
23+
SOP
9980
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢
 詢價(jià)
IDT
24+
SOP
6868
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
IDT
17+
SSOP
9888
只做原裝,現(xiàn)貨庫(kù)存
 詢價(jià)
IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
QS
23+
SSOP
65480
詢價(jià)
更多QS3252Q供應(yīng)商 更新時(shí)間2025-5-5 10:00:00

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