RA35H1516M-01中文資料三菱電機(jī)數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.

FEATURES

? Enhancement-Mode MOSFET Transistors (IDD?0 @ VDD=12.5V, VGG=0V)

? Pout>40W, ηT>50 @ VDD=12.5V, VGG=5V, Pin=50mW

? Low-Power Control Current IGG=1mA (typ) at VGG=5V

? Module Size: 66 x 21 x 9.88 mm

? Linear operation is possible by setting the quiescent drain current with

the gate voltage and controlling the output power with the input power