零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
RD | industrial controls and instrumentation | MERITEK MERITEK ELECTRONICS CORPORATION | MERITEK | |
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION RD00HHS1isaMOSFETtypetransistorspecificallydesignedforHFRFamplifiersapplications. FEATURES Highpowergain Pout>0.3W,Gp>19dB@Vdd=12.5V,f=30MHz APPLICATION ForoutputstageofhighpoweramplifiersinHFBandmobileradiosets. | MitsubishiMitsubishi Electric Semiconductor 三菱電機三菱電機株式會社 | Mitsubishi | ||
Planar Ultrafast Rectifier PlanarUltrafastRectifier Fasttrrtype,1A,600V,50ns,TP/TP-FA Features ?Highbreakdownvoltage(VRRM=600V) ?Fastreverserecoverytime ?Lowforwardvoltage(VFmax=1.3V) ?Lowswitchingnoise ?Halogenfreecompliance | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
Low VF ??High-Speed Switching Diode DiffusedJunctionSiliconDiode Features ?Highbreakdownvoltage(VRRM=600V) ?Fastreverserecoverytime ?Lowforwardvoltage(VFmax=1.3V) ?Lowswitchingnoise ?Halogenfreecompliance | SANYOSanyo Semicon Device 三洋三洋電機株式會社 | SANYO | ||
Planar Ultrafast Rectifier PlanarUltrafastRectifier Fasttrrtype,1A,600V,50ns,TP/TP-FA Features ?Highbreakdownvoltage(VRRM=600V) ?Fastreverserecoverytime ?Lowforwardvoltage(VFmax=1.3V) ?Lowswitchingnoise ?Halogenfreecompliance | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
Planar Ultrafast Rectifier PlanarUltrafastRectifier Fasttrrtype,1A,600V,50ns,TP/TP-FA Features ?Highbreakdownvoltage(VRRM=600V) ?Fastreverserecoverytime ?Lowforwardvoltage(VFmax=1.3V) ?Lowswitchingnoise ?Halogenfreecompliance | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS1isaMOSFETtypetransistorspecificallydesignedforVHF/UHFRFamplifiersapplications. FEATURES Highpowergain: Pout>0.8W,Gp>14dB@Vdd=7.2V,f=520MHz HighEfficiency:65typ. APPLICATION ForoutputstageofhighpoweramplifiersinVHF/UHFBandmobile | MitsubishiMitsubishi Electric Semiconductor 三菱電機三菱電機株式會社 | Mitsubishi | ||
Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS2isaMOSFETtypetransistorspecificallydesignedforVHF/UHFRFamplifiersapplications. ThisdevicehasaninternalmonolithiczenerdiodefromgatetosourceforESDprotection. FEATURES ?Highpowergain: Pout>0.8W,Gp>14dB@Vdd=7.2V,f=520MHz ?HighEfficiency:6 | MitsubishiMitsubishi Electric Semiconductor 三菱電機三菱電機株式會社 | Mitsubishi | ||
RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W DESCRIPTION RD01MUS2BisaMOSFETtypetransistorspecificallydesignedforVHF/UHFRFamplifiersapplications. ThisdevicehasaninternalmonolithiczenerdiodefromgatetosourceforESDprotection. FEATURES ?HighpowergainandHighEfficiency. Pout1.6WTyp,Gp15dBTyp,70Typ@Vdd= | MitsubishiMitsubishi Electric Semiconductor 三菱電機三菱電機株式會社 | Mitsubishi | ||
Silicon MOSFET Power Transistor 175MHz,520MHz,2W DESCRIPTION RD02MUS1isaMOSFETtypetransistorspecificallydesignedforVHF/UHFRFpoweramplifiersapplications. FEATURES Highpowergain: Pout>2W,Gp>16dB @Vdd=7.2V,f=175MHz,520MHz HighEfficiency:65typ.(175MHz) HighEfficiency:65typ.(520MHz) APPLICATION | MitsubishiMitsubishi Electric Semiconductor 三菱電機三菱電機株式會社 | Mitsubishi | ||
Silicon MOSFET Power Transistor 175MHz,520MHz,2W DESCRIPTION RD02MUS1BisaMOSFETtypetransistorspecificallydesignedforVHF/UHFRFpoweramplifiersapplications. RD02MUS1BimprovedadrainsurgethanRD02MUS1byoptimizingMOSFETstructure. FEATURES Highpowergain: Pout>2W,Gp>16dB @Vdd=7.2V,f=175MHz,520MHz High | MitsubishiMitsubishi Electric Semiconductor 三菱電機三菱電機株式會社 | Mitsubishi | ||
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DESCRIPTION RD02MUS2isaMOSFETtypetransistorspecificallydesignedforVHF/UHFRFpoweramplifiersapplications. ThisdevicehasaninternalmonolithiczenerdiodefromgatetosourceforESDprotection. FEATURES ?Highpowergain: Pout>2W,Gp>16dB @Vdd=7.2V,f=175MHz,520MHz ?Hi | MitsubishiMitsubishi Electric Semiconductor 三菱電機三菱電機株式會社 | Mitsubishi | ||
Low VF - High-Speed Switching Diode DiffusedJunctionSiliconDiode Features ?Highbreakdownvoltage(VRRM=600V). ?Fastreverserecoverytime. ?Lownoiseatthetimeofreverserecovery. ?Highreliability. ?Easytobemounted,goodheatdissipation. | SANYOSanyo Semicon Device 三洋三洋電機株式會社 | SANYO | ||
Diffused Junction Silicon Diode Low VF - High-Speed Switching Diode DiffusedJunctionSiliconDiode Features ?Highbreakdownvoltage(VRRM=600V). ?Fastreverserecoverytime. ?Lownoiseatthetimeofreverserecovery. ?Lowforwardvoltage(VFmax=1.5V). ?Halogenfreecompliance. | SANYOSanyo Semicon Device 三洋三洋電機株式會社 | SANYO | ||
Planar Ultrafast Rectifier Fast trr type, 3A, 600V, 50ns, TP/TP-FA PlanarUltrafastRectifier Fasttrrtype,3A,600V,50ns,TP/TP-FA Features ?Highbreakdownvoltage(VRRM=600V) ?Fastreverserecoverytime ?Lownoiseatthetimeofreverserecovery ?Lowforwardvoltage(VFmax=1.5V) ?Halogenfreecompliance | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
Planar Ultrafast Rectifier Fast trr type, 3A, 600V, 50ns, TP/TP-FA PlanarUltrafastRectifier Fasttrrtype,3A,600V,50ns,TP/TP-FA Features ?Highbreakdownvoltage(VRRM=600V) ?Fastreverserecoverytime ?Lownoiseatthetimeofreverserecovery ?Lowforwardvoltage(VFmax=1.5V) ?Halogenfreecompliance | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION RD04HMS2isMOSFETtypetransistorspecificallydesignedforVHF/UHF/890-950MHzRFpoweramplifiersapplications. FEATURES 1.HighPowergainandHighEfficiency Pout=5.0Wtyp.,Gp=14dBtyp. DrainEffi.=53typ. @Vds=12.5V,Pin=0.2W,f=950MHz 2.Integratedgateprotection | MitsubishiMitsubishi Electric Semiconductor 三菱電機三菱電機株式會社 | Mitsubishi | ||
Planar Ultrafast Rectifier PlanarUltrafastRectifier Fasttrrtype,5A,400V,50ns,TP/TP-FA Features ?VRRM=400V ?VFmax=1.5V ?trr=17ns(typ.)(IF=0.5A,IR=1A) ?Halogenfreecompliance | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
Low VF ??High-Speed Switching Diode DiffusedJunctionSiliconDiode Features ?VRRM=400V ?VFmax=1.5V ?trr=17ns(typ.)(IF=0.5A,IR=1A) ?Halogenfreecompliance | SANYOSanyo Semicon Device 三洋三洋電機株式會社 | SANYO | ||
Planar Ultrafast Rectifier PlanarUltrafastRectifier Fasttrrtype,5A,400V,50ns,TP/TP-FA Features ?VRRM=400V ?VFmax=1.5V ?trr=17ns(typ.)(IF=0.5A,IR=1A) ?Halogenfreecompliance | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI |
詳細參數(shù)
- 型號:
RD
- 制造商:
BlockMaster Electronics
- 功能描述:
Roll
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
SOD323 |
15000 |
全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
TOSHIBAC |
22+ |
SOT-23 |
25000 |
只有原裝原裝,支持BOM配單 |
詢價 | ||
RDA |
23+/24+ |
MSOP10 |
15000 |
原裝進口、正品保障、合作持久 |
詢價 | ||
DIODESHOHS--- |
RE71A180850x254 |
SMAJ54A-13 0444-0 |
150000 |
全新原裝現(xiàn)貨 樣品可售 |
詢價 | ||
TYOHM幸亞電阻 |
2023+ |
Axial2.4x6.5mm |
8635 |
一級代理優(yōu)勢現(xiàn)貨,全新正品直營店 |
詢價 | ||
HellermannTyton |
22+ |
NA |
155 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
Altech Corp. |
2022+ |
4996 |
全新原裝 貨期兩周 |
詢價 | |||
NA |
24+ |
35200 |
一級代理/放心采購 |
詢價 | |||
ST/意法 |
LGA14 |
6698 |
詢價 | ||||
CHENMK |
23+ |
SOD123 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
相關(guān)規(guī)格書
更多- RD0306T-H
- RD-0512D
- RD-0515D
- RD1/2WP-1.5K
- RD1/2WP-680K
- RD1/4WP-10R
- RD1/4WP-130R
- RD1/4WP-20K
- RD1/4WP-240K
- RD1/4WP-2K2
- RD1/4WP-2R2
- RD1/4WP-330R
- RD1/4WP-36K
- RD1/4WP-390R
- RD1/4WP-8K2
- RD1/4WP-910K
- RD1/4WPT-1K2
- RD100P
- RD10361
- RD10M
- RD10MW
- RD10SL
- RD10UM
- RD110S
- RD111C1121
- RD11P
- RD11SL
- RD11UM
- RD-1205D/P
- RD120S
- RD-1212D/P
- RD-125-1224
- RD-125-2412
- RD-125-4812
- RD-125A
- RD12M
- RD12S
- RD12UJ
- RD13M
- RD13P
- RD13SL
- RD13UM
- RD15K
- RD15M00000-759.25
- RD15S
相關(guān)庫存
更多- RD-0505D
- RD-0512D/P
- RD-0515D/P
- RD1/2WP-6.8K
- RD1/2WP-75K
- RD1/4WP-130K
- RD1/4WP-150R
- RD1/4WP-22R
- RD1/4WP-27K
- RD1/4WP-2K7
- RD1/4WP-330K
- RD1/4WP-33K
- RD1/4WP-390K
- RD1/4WP-56R
- RD1/4WP-8M2
- RD1/4WP-91K
- RD100FM
- RD100S
- RD10L
- RD10M50
- RD10S
- RD10UJ
- RD110P
- RD1113112R
- RD11M
- RD11S
- RD11UJ
- RD-1205D
- RD120P
- RD-1212D
- RD-1215D
- RD-125-1248
- RD-125-2448
- RD-125-4824
- RD-125B
- RD12P
- RD12SL
- RD12UM
- RD13MW
- RD13S
- RD13UJ
- RD15CG101J500
- RD15M
- RD15P
- RD167