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1SMA12AT3G

Marking：RE；The 1SMA5.0AT3G series is designed to protect voltage sensitive components from high voltage

Description The1SMA5.0AT3Gseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.The1SMA5.0AT3GseriesissuppliedintheLittelfuseexclus

Littelfuselittelfuse

力特力特公司

1SMA12AT3G

Marking：RE；Package：SMB；400 Watt Peak Power Zener Transient Voltage Suppressors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1SMA12AT3G

Marking：RE；Package：SMB；400 Watt Peak Power Zener Transient Voltage Suppressors

400WattPeakPowerZenerTransientVoltageSuppressors Unidirectional TheSMAseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheSMA

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SC3357

Marking：RE；Package：SOT-89；NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD

FEATURES ?Lownoiseandhighgain NF=1.1dBTYP.,Ga=7.5dBTYP.@VCE=10V,IC=7mA,f=1GHz NF=1.8dBTYP.,Ga=9.0dBTYP.@VCE=10V,IC=40mA,f=1GHz ?Highpowergain:MAG=10dBTYP.@IC=40mA,f=1GHz ?LargePtot:Ptot=1.2W(Mountedon16cm2×

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC3357

Marking：RE；Package：SOT-89；NPN Silicon RF Transistor

Features ●LowNoiseandHighGain NF=1.1dBTYP.,Ga=7.5dBTYP.@VCE=10V,IC=7mA,f=1.0GHz NF=1.8dBTYP.,Ga=9.0dBTYP.@VCE=10V,IC=40mA,f=1.0GHz ●Highpowergain:MAG=10dBTYP.@IC=40mA,f=1GHz

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SC3357

Marking：RE；Package：SOT-89；NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The2SC3357isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband.Ithaslargedynamicrangeandgoodcurrentcharacteristic. FEATURES ?LowNoiseandHighGain NF=1.1dBTYP.,Ga=8.0dBTYP.@VCE=10V,IC=7mA,f=1.0GHz N

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SC3357C

Marking：RE；Package：SOT-89；NPN SILICON RF TRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V，IC=20mA，f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V，IC=7mA，f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V，IC=20mA，f=1GHz

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

2SC3357D

Marking：RE；Package：SOT-89；NPN SILICON RF TRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V，IC=20mA，f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V，IC=7mA，f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V，IC=20mA，f=1GHz

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

2SC3357E

Marking：RE；Package：SOT-89；NPN SILICON RF TRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V，IC=20mA，f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V，IC=7mA，f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V，IC=20mA，f=1GHz

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

74AXP1G08GM

Marking：rE；Package：XSON6；Low-power 2-input AND gates

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

74AXP1G08GN

Marking：rE；Package：XSON6；Low-power 2-input AND gates

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

74AXP1G08GS

Marking：rE；Package：XSON6；Low-power 2-input AND gates

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

74AXP1G08GX

Marking：rE；Package：X2SON5；Low-power 2-input AND gates

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

AAT3681IJS-4.2-T1

Marking：REXYY；Package：SC70JW-8；USB Port or AC Adapter Li-Ion/Polymer Battery Charger

Features ?USBorACAdapterSystemPowerCharger ?Programmablefrom15mAto300mA ?4.0V~7.5VInputVoltageRange ?HighLevelofIntegrationwithInternal: ?ChargingDevice ?ReverseBlockingDiode ?AutomaticCurrentSensing ?AutomaticRechargeSequencing ?FullBatteryChargeAut

SKYWORKSSkyworks Solutions Inc.

思佳訊美國思佳訊公司

BD5344

Marking：RE；Package：SSOP5；Free Delay Time Setting CMOS Voltage Detector IC Series

ROHMRohm

羅姆羅姆半導(dǎo)體集團

BD5344

Marking：RE；Package：SSOP5；Voltage Detector IC with Adjustable Output Delay

ROHMRohm

羅姆羅姆半導(dǎo)體集團

BD5344FVE-TR

Marking：RE；Package：VSOF5；Free Delay Time Setting CMOS Voltage Detector IC Series

Description ROHM’sBD52□□G/FVEandBD53□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,

ROHMRohm

羅姆羅姆半導(dǎo)體集團

BD5344FVE-TR

Marking：RE；Package：VSOF5；Delay time controlled by extemal capacitor

Description ROHM’sBD52□□G/FVEandBD53□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,

ROHMRohm

羅姆羅姆半導(dǎo)體集團

BD5344G-TR

Marking：RE；Package：SSOP5；Highly accurate, low current consumption Voltage Detector ICs with a capacitor-controlled time delay.

ROHMRohm

羅姆羅姆半導(dǎo)體集團

BD5344G-TR

Marking：RE；Package：SSOP5；Free Delay Time Setting CMOS Voltage Detector IC Series

Description ROHM’sBD52□□G/FVEandBD53□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,

ROHMRohm

羅姆羅姆半導(dǎo)體集團

替換型號

產(chǎn)品屬性

  • 產(chǎn)品編號：

    RE

  • 制造商：

    Vitrek

  • 類別：

    測試與計量 > 配件

  • 包裝：

    零售封裝

  • 類型：

    專用

  • 配件類型：

    適配器套件

  • 配套使用/相關(guān)產(chǎn)品：

    6000, 6250 Series

  • 描述：

    RE - RACK ADAPTER KIT

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NEC
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SMAJ54A-13 0444-0
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HellermannTyton
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