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1SMA12AT3G

Marking：RE；The 1SMA5.0AT3G series is designed to protect voltage sensitive components from high voltage

Description The1SMA5.0AT3Gseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.The1SMA5.0AT3GseriesissuppliedintheLittelfuseexclus

Littelfuselittelfuse

力特力特公司

1SMA12AT3G

Marking：RE；Package：SMB；400 Watt Peak Power Zener Transient Voltage Suppressors

400WattPeakPowerZenerTransientVoltageSuppressors Unidirectional TheSMAseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheSMA

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1SMA12AT3G

Marking：RE；Package：SMB；400 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional

400WattPeakPowerZenerTransientVoltageSuppressors Unidirectional TheSMAseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheSMA

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1SMA12AT3G

Marking：RE；Package：SMB；400 Watt Peak Power Zener Transient Voltage Suppressors

400WattPeakPowerZenerTransientVoltageSuppressors Unidirectional* TheSMAseriesisdesignedtoprotectvoltagesensitivecomponentsfromhighvoltage,highenergytransients.Theyhaveexcellentclampingcapability,highsurgecapability,lowzenerimpedanceandfastresponsetime.TheSM

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1SMA36A

Marking：RE；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

2SC3357

Marking：RE；Package：SOT-89；NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD

FEATURES ?Lownoiseandhighgain NF=1.1dBTYP.,Ga=7.5dBTYP.@VCE=10V,IC=7mA,f=1GHz NF=1.8dBTYP.,Ga=9.0dBTYP.@VCE=10V,IC=40mA,f=1GHz ?Highpowergain:MAG=10dBTYP.@IC=40mA,f=1GHz ?LargePtot:Ptot=1.2W(Mountedon16cm2×

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC3357

Marking：RE；Package：SOT-89；NPN Silicon RF Transistor

Features ●LowNoiseandHighGain NF=1.1dBTYP.,Ga=7.5dBTYP.@VCE=10V,IC=7mA,f=1.0GHz NF=1.8dBTYP.,Ga=9.0dBTYP.@VCE=10V,IC=40mA,f=1.0GHz ●Highpowergain:MAG=10dBTYP.@IC=40mA,f=1GHz

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SC3357

Marking：RE；Package：SOT-89；NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The2SC3357isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband.Ithaslargedynamicrangeandgoodcurrentcharacteristic. FEATURES ?LowNoiseandHighGain NF=1.1dBTYP.,Ga=8.0dBTYP.@VCE=10V,IC=7mA,f=1.0GHz N

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SC3357C

Marking：RE；Package：SOT-89；NPN SILICON RF TRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V，IC=20mA，f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V，IC=7mA，f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V，IC=20mA，f=1GHz

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

2SC3357D

Marking：RE；Package：SOT-89；NPN SILICON RF TRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V，IC=20mA，f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V，IC=7mA，f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V，IC=20mA，f=1GHz

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

替換型號

產(chǎn)品屬性

  • 產(chǎn)品編號：

    RE

  • 制造商：

    Vitrek

  • 類別：

    測試與計量 > 配件

  • 包裝：

    零售封裝

  • 類型：

    專用

  • 配件類型：

    適配器套件

  • 配套使用/相關(guān)產(chǎn)品：

    6000, 6250 Series

  • 描述：

    RE - RACK ADAPTER KIT

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