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RF1S50N06LESM中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

RF1S50N06LESM
廠商型號

RF1S50N06LESM

功能描述

50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs

文件大小

412.33 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-21 13:30:00

RF1S50N06LESM規(guī)格書詳情

These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

Features

? 50A, 60V

?rDS(ON)= 0.022?

? Temperature Compensating PSPICE? Model

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? 175°C Operating Temperature

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

產(chǎn)品屬性

  • 型號:

    RF1S50N06LESM

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

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