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RF5L08600CB4中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

RF5L08600CB4
廠商型號

RF5L08600CB4

功能描述

650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

文件大小

2.03193 Mbytes

頁面數(shù)量

12

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導體

中文名稱

意法半導體集團官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-4 10:36:00

RF5L08600CB4規(guī)格書詳情

Features

? High efficiency and linear gain operations

? Integrated ESD protection

? Internally matched pair transistors in push-pull configuration

? Large positive and negative gate-source voltage range for improved class C

operation

? Excellent thermal stability, low HCI drift

? In compliance with the european directive 2002/95/EC

Description

The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS

FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.

Applications

? Wideband lab amplifier from 0.4 to 1 GHz

? Digital UHF TV 470-860 MHz

? 650 MHz particle accelerator

? 915 MHz RF energy applications

供應商 型號 品牌 批號 封裝 庫存 備注 價格
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