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RFD10P03L

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The

Intersil

Intersil Corporation

RFD10P03L

10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD10P03L

10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET

Description TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

HARRIS

Harris Corporation

RFD10P03LSM

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The

Intersil

Intersil Corporation

RFD10P03LSM

10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET

Description TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

HARRIS

Harris Corporation

RFD10P03LSM9A

10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET

Description TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

HARRIS

Harris Corporation

RFD10P03L-251

P-Channel 60-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

RFP10P03L

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The

Intersil

Intersil Corporation

RFP10P03L

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

RFP10P03L

10A,30V,0.200ohm,LogicLevelP-ChannelPowerMOSFET

Description TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

HARRIS

Harris Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    RFD10P03L

  • 功能描述：

    MOSFET TO-251 P-Ch Power

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INTERSIL/FSC
23+
TO-251
28610
詢價(jià)
HARRIS
12+
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
24+
N/A
5000
公司存貨
 詢價(jià)
INTERSIL
23+
TO-251
9500
專業(yè)優(yōu)勢(shì)供應(yīng)
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
HARRIS
24+
TO-251
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
 詢價(jià)
HARRIS/哈里斯
21+
TO-251
30000
只做正品原裝現(xiàn)貨
 詢價(jià)
HARRIS
21+
TO-251
1498
原裝現(xiàn)貨庫(kù)存
 詢價(jià)
HARRIS/哈里斯
23+
TO-251
10000
公司只做原裝正品
 詢價(jià)
英飛凌/FSC
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
更多RFD10P03L供應(yīng)商 更新時(shí)間2025-2-22 15:37:00

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