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16N05

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

D16N05

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KGF16N05D

N-Channel5.5VDualPowerMOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RFD16N05

60VN-ChannelMOSFET

Features VDS(V)=60V RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司(簡(jiǎn)稱(chēng)UMW?)

RFD16N05

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD16N05

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD16N05

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication

Intersil

Intersil Corporation

RFD16N05

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

Intersil

Intersil Corporation

RFD16N05L

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

Intersil

Intersil Corporation

RFD16N05L

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD16N05LSM

N-channelEnhancementModePowerMOSFET

Features ?VDS=60V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

RFD16N05LSM

MOSFET-Power,N-Channel,LogicLevel50V,16A,47m

TheseareN?ChannellogiclevelpowerMOSFETsmanufactured usingtheMegaFETprocess.Thisprocess,whichusesfeaturesizes approachingthoseofLSIintegratedcircuitsgivesoptimumutilization ofsilicon,resultinginoutstandingperformance.Theyweredesigned forusewithlogiclevel(5V

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

RFD16N05LSM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

RFD16N05LSM

N-ChannelLogicLevelPowerMOSFET50V,16A,47m廓

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD16N05LSM

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD16N05LSM

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

Intersil

Intersil Corporation

RFD16N05LSM-NL

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

RFD16N05SM

N-channelEnhancementModePowerMOSFET

Features ?VDS=60V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

RFD16N05SM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

RFD16N05SM

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    RFD16N05LSM_Q

  • 功能描述：

    MOSFET TO-252AA N-Ch Power

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INTERIL
2020+
TO-252
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢(xún)價(jià)
INTERIL
22+
TO-252
28600
只做原裝正品現(xiàn)貨假一賠十一級(jí)代理
 詢(xún)價(jià)
INTERIL
TO-252
699839
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢(xún)價(jià)
INTERIL
23+
TO-252
386
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
哈里斯
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
哈里斯
2022
TO-252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún)
 詢(xún)價(jià)
哈里斯
23+
NA/
6259
原廠直銷(xiāo),現(xiàn)貨供應(yīng),賬期支持!
 詢(xún)價(jià)
FAI
24+
2500
詢(xún)價(jià)
ONSemiconductor
18+
NA
3128
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190
 詢(xún)價(jià)
FAIRCHILDSEM
23+
原廠封裝
13528
振宏微原裝正品,假一罰百
 詢(xún)價(jià)
更多RFD16N05LSM_Q供應(yīng)商 更新時(shí)間2024-10-24 15:22:00

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