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首頁>RFD12N06RLESM>芯片詳情
RFD12N06RLESM_ONSEMI/安森美半導(dǎo)體_MOSFET N D-PAK匯萊威一部
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號(hào):
RFD12N06RLESM
- 制造商:
Fairchild Semiconductor Corporation
- 功能描述:
MOSFET N D-PAK
- 功能描述:
MOSFET, N, D-PAK
- 功能描述:
MOSFET, N, D-PAK; Transistor
- Polarity:
N Channel; Continuous Drain Current
- Id:
17A; Drain Source Voltage
- Vds:
60V; On Resistance
- Rds(on):
70mohm; Rds(on) Test Voltage
- Vgs:
10V; Threshold Voltage Vgs
- Typ:
3V; Power Dissipation
- Pd:
49W ;RoHS
- Compliant:
Yes
供應(yīng)商
- 企業(yè):
深圳市匯萊威科技有限公司
- 商鋪:
- 聯(lián)系人:
朱小姐
- 手機(jī):
18126328660
- 詢價(jià):
- 電話:
0755-82767689
- 地址:
深圳市福田區(qū)華富路1046號(hào)華康大夏2棟503
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