零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
FastSwitching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor ?FEATURES ?DrainCurrent:ID=20A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=50mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?LEDbackl | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-ChannelPowerMOSFET | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
N-ChannelPowerMOSFET | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
N-ChannelMOSFETusesadvancedSGTtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-ChannelEnhancementMOSFET Features ?VDS=100V,ID=30A ?RDS(ON)=17mΩ@VGS=10V(Typ.) ?RDS(ON)=22mΩ@VGS=4.5V(Typ.) ?HighPowerandcurrenthandingcapability ?Leadfreeproductisacquired ?SurfaceMountPackage MainApplications ?BatteryProtection ?LoadSwitch ?PowerManagement | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
100VN-ChannelMOSFET | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司 | FOSTER | ||
N-ChannelPowerMOSFET | FS First Silicon Co., Ltd | FS | ||
N-ChannelEnhancementModePowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelEnhancementModePowerMOSFET | HUILIDAShenzhen hui lida electronic co., LTD 匯利達(dá)廣東匯利達(dá)半導(dǎo)體有限公司 | HUILIDA | ||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
N-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
N-channel100V,0.02廓typ.,32ASTripFET??F7PowerMOSFETinaTO-220package Description ThisN-channelPowerMOSFETutilizes STripFET?F7technologywithanenhanced trenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternal capacitanceandgatechargeforfasterandmore efficientswitching. Features ?AmongthelowestRDS(o | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-CHANNEL100V-0.06ohm-30A-D2PAKPOWERMOSTRANSISTOR N-CHANNEL100V-0.06?-30A-D2PAKPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.06? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■APPLICATIONORIENTEDCHARACTERIZATION ■SURFACE-MOUNTINGD2PAK | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
哈里斯 |
05+ |
TO-247 |
2000 |
原裝進(jìn)口 |
詢價 | ||
24+ |
N/A |
3920 |
詢價 | ||||
infineon |
23+ |
原廠原裝 |
4000 |
全新原裝 |
詢價 | ||
INF |
23+ |
TO |
10000 |
公司只做原裝正品 |
詢價 | ||
INF |
TO |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
哈里斯 |
23+ |
TO-247 |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
INF |
23+ |
TO |
6000 |
原裝正品,支持實單 |
詢價 | ||
HARRIS(哈利斯) |
20+ |
TO-218-Isolated |
3000 |
詢價 | |||
INF |
22+ |
TO |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價 | ||
HARRIS(哈利斯) |
23+ |
TO218 |
6000 |
誠信服務(wù),絕對原裝原盤 |
詢價 |
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