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RFM

Non-Inductive High Frequency Melf Resistors

TOKENToken Electronics Industry Co., Ltd.

德鍵電子德鍵電子工業(yè)股份有限公司

RFM

1 Watt SIP4 Single Output

RECOM

Recom International Power

RFM00U7U

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

RFM01U7P

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

RFM03U3CT

Field Effect Transistor Silicon N Channel MOS Type

VHF-andUHF-bandAmplifierApplications (Note)TheTOSHIBAproductslistedinthisdocumentareintendedforhigh frequencyPowerAmplifieroftelecommunicationsequipment..These TOSHIBAproductsareneitherintendednorwarrantedforanyotheruse. DonotusetheseTOSHIBAproductslistedi

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

RFM03U3CT

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

RFM04U6P

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

RFM07U7X

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

VHF-andUHF-bandAmplifierApplications (Note)TheTOSHIBAproductslistedinthisdocumentareintendedforhighfrequencyPowerAmplifieroftelecommunicationsequipment.TheseTOSHIBAproductsareneitherintendednorwarrantedforanyotheruse.DonotusetheseTOSHIBAproductslistedinthi

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

RFM08U9X

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

RFM10N12

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESS

GE Solid State

RFM10N15

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESS

GE Solid State

RFM10N45

10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

Intersil

Intersil Corporation

RFM10N50

10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

Intersil

Intersil Corporation

RFM10P12

P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS

P-ChannelEnhancement-ModePowerField-EffectTransistors Features: ■SOAispower-dissipationlimited ■Nanosecondeswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESS

GE Solid State

RFM10P15

P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS

P-ChannelEnhancement-ModePowerField-EffectTransistors Features: ■SOAispower-dissipationlimited ■Nanosecondeswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESS

GE Solid State

RFM12

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

Features ?Lowcosting,highperformanceandpriceratio ?Tuningfreeduringproduction ?PLLandzeroIFtechnology ?FastPLLlocktime ?HighresolutionPLLwith2.5KHzstep ?Highdatarate(upto115.2kbpswithinternaldemodulator，withexternalRCfilterhighestdatarateis 256kb

HOPEHOPE Microelectronics CO., Ltd.

華普微電子深圳市華普微電子股份有限公司

RFM12N08

12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

Intersil

Intersil Corporation

RFM12N08

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

RFM12N08

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

RFM12N08L

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

TheRFM12N08LandRFM12N10LandtheRFP12N08LandRFP12N10Laren-channelenhancement-modesilicon-gatepowerfield-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddriver

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

詳細參數(shù)

  • 型號：

    RFM

  • 制造商：

    Amphenol PCD

  • 功能描述：

    INSERTION TOOL - Bulk

供應商型號品牌批號封裝庫存備注價格
BLUECELL
99+
2145
全新原裝進口自己庫存優(yōu)勢
 詢價
24+
SOP
7500
絕對原裝自家現(xiàn)貨!真實庫存!歡迎來電!
 詢價
ZTX
06+
原廠原裝
9051
只做全新原裝真實現(xiàn)貨供應
 詢價
TOSHIBA
23+
SOT89
9526
詢價
SKYWORKS 
17+
QFN
6200
100%原裝正品現(xiàn)貨
 詢價
RFHIC
23+
高頻管
350
專營高頻管模塊,全新原裝!
 詢價
HARRIS
2020+
N/A
174
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
24+
N/A
2140
詢價
TOSHIBA
23+
SOP89
5000
原裝正品,假一罰十
 詢價
HARRIS
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
 詢價
更多RFM供應商 更新時間2024-12-25 9:30:00

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