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RLFTPGB20N65CT

N-CHANNEL IGBT

APPLICATIONS Generalpurposeinverters UPS AirCondition FEATURES Lowgatecharge TrenchFSTechnology RoHSproduct

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

20N65

20A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC20N65isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCUnisonic Technologies

友順友順科技股份有限公司

20N65

20AN-ChannelPowerMOSFET

Features ●RDS(ON)=0.35Ω ●Ultralowgatecharge(Typical150nC) ●Lowreversetransfercapacitance(CRSS=typical36pF) ●Fastswitchingcapability ●Avalancheenergyspecified ●Improveddv/dtcapability,highruggedness Application ●Powerfactorcorrection（PFC） ●Switchedm

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

20N65A

20A650VN-channelenhancementmodefieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風微電子廣東佑風微電子有限公司

20N65Y

20Amps,650VoltsN-CHANNELMOSFET

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重慶平偉實業(yè)重慶平偉實業(yè)股份有限公司

AM20N65

MOSFET650V,20AN-CHANNEL

FEATURE ?ProprietaryNewPlanarTechnology ?RDS(ON),typ.typ.=0.38?@VGS=10V ?LowGateChargeMinimizeSwitchingLoss ?FastRecoveryBodyDiode DESCRIPTION TheAM20N65isavailableinTO220andTO220F Packages. APPLICATIONS ?Adaptor ?TVMainPower ?SMPSPowerSupply ?LCDPanel

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

CEB20N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB20N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB20N65SF

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. Fastreverserecoverytime. Drivecircuitscanbesimple.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CECS20N65LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,19A,RDS(ON)=180mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

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