RM10N600LD中文資料RECTRON數(shù)據(jù)手冊PDF規(guī)格書

General Description

The RM10N600LD use advanced trench gate super

junction technology and design to provide excellent RDS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

Features

VDS =600V,ID =10.2A

RDS(ON) =268mΩ (typical) @ VGS=10V

New technology for high voltage device

Low on-resistance and low conduction losses

Small package

Ultra Low Gate Charge cause

100% Avalanche Tested

ROHS compliant

Halogen-free