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024N06N

OptiMOS??Power-TransistorFeaturesIdealforhighfrequencyswitchingandsync.rec.

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

FDB024N06

N-ChannelPowerTrench?MOSFET60V,265A,2.4m廓

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features ?RDS(on)=1.8m?(Typ.)@VGS=10V,ID=75A ?F

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KU024N06P

N-chTrenchMOSFET

GeneralDescription ThisTrenchMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConverter,SynchronousRectificationandaloadswitchinbatterypoweredapplications FEATU

KECKEC CORPORATION

KEC株式會(huì)社

NTTFS024N06C

MOSFET–Power,SingleN-Channel,8FL

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications ?PowerTools,BatteryOperatedVacuum

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVMFD024N06C

MOSFET??Power,DualN-Channel,SO-8FL60V,22.6m,24A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVMFWD024N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,Hal

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVMFS024N06C

MOSFET-Power,SingleN-Channel,SO-8FL60V,22m,25A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVTFS024N06C

MOSFET-Power,SingleN-Channel,8FL60V,22.6m,24A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS024N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fre

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVTFS024N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,22.6m,24A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS024N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fre

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVTFWS024N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,22.6m,24A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS024N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fre

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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亞成微
23+
TO-220
7500
亞成微全系列在售
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LAIRD
20+
射頻元件
3000
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萊爾德
22+
NA
500000
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JFD
23+
SMD
11200
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VISHAY(威世)
23+
插件,D2.5xL7mm
7350
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更多RMB024N06SL-AU供應(yīng)商 更新時(shí)間2025-1-27 11:00:00