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RMK55N10KF

Single Value Chip Resistors

VishayVishay Siliconix

威世科技威世科技半導體

RMK55N10KF

包裝:卷帶(TR) 類別:電阻器 片式電阻器 - 表面貼裝 描述:SFERNICE THIN FILMS

Vishay Sfernice

Vishay Sfernice

Vishay Sfernice

55N10

FastSwitchingSpeed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

CED55N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,55A,RDS(ON)=16mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED55N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,55A,RDS(ON)=16mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU55N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,55A,RDS(ON)=16mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU55N10

N-ChannelMOSFETusesadvancedSGTtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導體有限公司

CEU55N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,55A,RDS(ON)=16mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FQA55N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=61A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=26mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQA55N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQAF55N10

100VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB55N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.026Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQB55N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB55N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB55N10TM

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI55N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI55N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP55N10

55A,100VHeatsinkPlanarN-ChannelPowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導體思祁半導體有限公司

FQP55N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=55A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=26mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRITION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQP55N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    RMK55N10KF

  • 制造商:

    Vishay Sfernice

  • 類別:

    電阻器 > 片式電阻器 - 表面貼裝

  • 包裝:

    卷帶(TR)

  • 描述:

    SFERNICE THIN FILMS

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY(威世)
23+
7350
現(xiàn)貨供應(yīng),當天可交貨!免費送樣,原廠技術(shù)支持!!!
詢價
Mini-circuits
18+
原廠原裝
6000
專注Mini射頻微波全系列,只做原裝正品,現(xiàn)貨庫存
詢價
MINI
24+
SMD
3600
MINI專營品牌全新原裝正品假一賠十
詢價
MINI
TT1224
6688
1816
現(xiàn)貨庫存
詢價
MINI
三年內(nèi)
1983
只做原裝正品
詢價
Mini-Circuits
638
原裝正品
詢價
MINI
2020+
NULL
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
MINI-CIRCUITS
22+
NULL
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
SMD
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
原裝
1923+
NA
1550
原盒原包裝現(xiàn)貨原裝假一罰十價優(yōu)
詢價
更多RMK55N10KF供應(yīng)商 更新時間2025-1-9 10:09:00