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RMQCEA3618DGBA

36-Mbit DDR? II SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT

Description TheRMQCEA3636DGBAisa1,048,576-wordby36-bitandtheRMQCEA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCEA3618DGBA-182#AC0

36-Mbit DDR??II SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCEA3618DGBA-182#AC0

36-Mbit DDR??II SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCEA3618DGBA-202#AC0

36-Mbit DDR??II SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCEA3618DGBA-202#AC0

36-Mbit DDR??II SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCHA3618DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCHA3618DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSAA3618DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)

Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSDA3618DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)withODT

Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSGA3618DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSKA3618DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)withODT

Features PowerSupply 1.8Vforcore(VDD),1.4VtoVDDforI/O(VDDQ) Clock Fastclockcycletimeforhighbandwidth Twoinputclocks(Kand/K)forpreciseDDRtimingatclockrisingedgesonly Twooutputechoclocks(CQand/CQ)simplifydatacaptureinhigh-speedsystems 

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

TDA3618

Multiplevoltageregulatorwithswitchandignitionbuffers

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

TDA3618

Multiplevoltageregulatorwithswitchandignitionbuffers

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

TDA3618AJR

Multiplevoltageregulatorwithswitchandignitionbuffers

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

TDA3618JR

Multiplevoltageregulatorwithswitchandignitionbuffers

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

TPS3618

BATTERY-BACKUPSUPERVISORFORRAMRETENTION

TI1Texas Instruments

德州儀器

VS3618AH

N-Channel30V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?LowOn-Resistance ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverters,HighSpeedSwitching

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

ZCAT3618-D

ClampFilters(FerriteCorewithCase)

FEATURES ?Uniqueplasticcaseensuressimple,convenientinstallationandincludesaself-holdingmechanismtopreventslippageoncables. ?Ferritecoreprovidesexcellentabsorptionofhigh-frequencyEMC. ?HighlyeffectiveascountermeasureagainstcommonmodeEMCwithoutadverseeffe

TDKTDK Corporation

TDK株式會社東電化（中國）投資有限公司

ZCAT3618-D

ClampFilters(FerriteCorewithCase)Forcable

ClampFiltersForCable FEATURES ?Uniqueplasticcaseensuressimple,convenientinstallationandincludesaself-holdingmechanismtopreventslippageoncables. ?Ferritecoreprovidesexcellentabsorptionofhigh-frequencyEMC. ?Highlyeffectiveascountermeasureagainstcommon

TDKTDK Corporation

TDK株式會社東電化（中國）投資有限公司

ZCAT3618-D

ClampFiltersForCable

ClampFiltersForCable FEATURES ?Uniqueplasticcaseensuressimple,convenientinstallationandincludesaself-holdingmechanismtopreventslippageoncables. ?Ferritecoreprovidesexcellentabsorptionofhigh-frequencyEMC. ?Highlyeffectiveascountermeasureagainstcommon

TDKTDK Corporation

TDK株式會社東電化（中國）投資有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS
1923+
NA
6900
只做進口原裝假一罰十品質(zhì)決定一切價格優(yōu)惠
 詢價
RENESAS/瑞薩
21+
BGA
1574
詢價
RENESAS/瑞薩
BGA
145
原裝現(xiàn)貨
 詢價
DBLECTRO
23+
原廠原包
29960
只做進口原裝 終端工廠免費送樣
 詢價
亞成微
23+
TOLL
7500
亞成微全系列在售
 詢價
TOS
24+
SOT-123
9000
詢價
reso
420
公司優(yōu)勢庫存 熱賣中!
 詢價
RESON
23+
6540
只做原裝正品現(xiàn)貨或者訂貨假一賠十!
 詢價
更多RMQCEA3618DGBA供應(yīng)商 更新時間2025-1-19 14:30:00

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