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RTH23007-10中文資料RFHIC數(shù)據(jù)手冊PDF規(guī)格書

RTH23007-10
廠商型號

RTH23007-10

功能描述

GaN Doherty Hybrid Amplifier

文件大小

295.24 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 rfhic
企業(yè)簡稱

RFHIC

中文名稱

rfhic官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-2-4 17:00:00

RTH23007-10規(guī)格書詳情

Description

Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. This high performance amplifier achieves high efficiency of 45, and powers 7W over the frequency range from 2300MHz to 2400MHz. Integrated with Asymmetrical Doherty configurations, RTH Series is packaged in a very small form-factor 28 x 19 x 4.8mm on AIN (aluminum nitride) board which provides excellent thermal dissipation.

Product Features

? GaN on SiC Chip on Board

? Surface Mount Hybrid Type

? Asymmetric Doherty Amplifier

? High Efficiency

? No Matching circuit needed

Applications

? RF Sub-Systems

? Base Station

? RRH

? 4G/ LTE system

? Small cell

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
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