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SML-LXR2106SIC-TR

0.6mmX2.1mmPCBRightAngleSurfaceMountLed

Lumex

LUMEX INC.

SML-LXR2106SUGC-TR

0.6mmX2.1mmPCBRightAngleSurfaceMountLed

Lumex

LUMEX INC.

SML-LXR2106SYC-TR

0.6mmX2.1mmPCBRightAngleSurfaceMountLed

Lumex

LUMEX INC.

SML-LXR2106USBC-TR

0.6mmX2.1mmPCBRightAngleSurfaceMountLed

Lumex

LUMEX INC.

SMV2106

PLASTICSURFACEMOUNTGENERALPURPOSEABRUPTVARACTORDIODES

PLASTICSURFACEMOUNTGENERALPURPOSEABRUPTVARACTORDIODES DCPowerDissipation@Ta=25°C250mW ReverseBreakdownVoltage@10μA30VMin MaxReverseCurrent(IR)@Ta=25°C0.1μA@25Vdc OperatingTemperature(Topr)-55to+125°C StorageT

KNOX

Knox Semiconductor, Inc

SP2106

SuperhighdensecelldesignforlowRDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

TN2106

N-ChannelEnhancement-ModeVerticalDMOSFET

SUTEX

Supertex, Inc

TN2106

N-ChannelEnhancement-ModeVerticalDMOSFET

SUTEX

Supertex, Inc

TN2106

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped

SUTEX

Supertex, Inc

TN2106

N-ChannelEnhancement-ModeVerticalDMOSFET

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

TN2106ND

N-ChannelEnhancement-ModeVerticalDMOSFETs

SUTEX

Supertex, Inc

TN2106ND

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped

SUTEX

Supertex, Inc

TPC-2106

IndustrialWindowsCETouchPanelComputers

NI

National Instruments Inc.

TR2106SY

RECTIFIERDIODE

FEATURES ■DoubleSideCooling ■HighSurgeCapability APPLICATIONS ■Rectification ■FreewheelDiode ■DCMotorControl ■PowerSupplies ■Welding ■BatteryChargers

TRSYS

Transys Electronics

TW2106

TW2106/TW2108EmbeddedPrecisionGPSL1Antenna

TALLYSMAN

Tallysman Wireless Inc.

UM2106

ATTENUATORANDPOWERPINDIODES2??30MHz

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UM2106

PINDIODE

DESCRIPTION UM2100SeriesPINdiodesaredesignedfortransmit/receiveswitchandattenuatorapplicationsinHFband(2-30MHz)andbelow.Asseriesconfiguredswitches,theselonglifetime(25μstypical)diodescancontrolupto2.5kW,CWina50ohmsystem.InHFband,insertionlossisless

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UM2106B

ProductChangeNotification

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UM2106D

ProductChangeNotification

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UPG2106

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號:

    RTS2106B

  • 功能描述:

    Easy(EZ)-Pure Speech

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NA
6528
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24+
N/A
47000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
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更多RTS2106B供應(yīng)商 更新時間2024-12-24 10:00:00