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S2M0080120D

1200V SIC POWER MOSFET

?Positivetemperaturecharacteristics,easytoparallel. ?Lowon-resistanceTyp.RDS(on)=77mΩ. ?Fastswitchingspeedandlowswitchinglosses. ?Veryfastandrobustintrinsicbodydiode. ?Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件(南京)有限公司

C2M0080120D

SiCN-ChannelMOSFET

FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=80mΩ(TYP.)@VGS=20VTJ=25℃ ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

C2M0080120D

SiliconCarbidePowerMOSFETC2MTMMOSFETTechnologyN-ChannelEnhancementMode

Features ?HighBlockingVoltagewithLowOn-Resistance ?HighSpeedSwitchingwithLowCapacitances ?EasytoParallelandSimpletoDrive ?AvalancheRuggedness ?HalogenFree,RoHSCompliant Benefits ?HigherSystemEfficiency ?ReducedCoolingRequirements ?IncreasedPowerDensity ?

WOLFSPEED

WOLFSPEED, INC.

C2M0080120D

SiliconCarbidePowerMOSFETZ-FETTMMOSFET

CreeCree, Inc

科銳

C2M0080120D

CREESiliconCarbideMOSFETEvaluationKit

Description: ThisEvaluationkitismeanttodemonstratethehighperformanceofallCREE1200VMOSFETsandCREESchottkydiodes(SBD)instandardTO-247package.ThekitincludestwoCree80mOhm,1200VCREEMOSFETsandtwo1200V20Aschottkydiodes;ahalfbridgeconfiguredevaluationboardthat

CreeCree, Inc

科銳

S2M0080120J

1200VSICPOWERMOSFET

Positivetemperaturecharacteristics,easytoparallel. Lowon-resistanceTyp.RDS(on)=77mΩ. Fastswitchingspeedandlowswitchinglosses. Veryfastandrobustintrinsicbodydiode. Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件(南京)有限公司

S2M0080120K

1200VSICPOWERMOSFET

?Positivetemperaturecharacteristics,easytoparallel. ?Lowon-resistanceTyp.RDS(on)=77mΩ. ?Fastswitchingspeedandlowswitchinglosses. ?Veryfastandrobustintrinsicbodydiode. ?“-A”isanAEC-Q101qualifieddevice ?Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件(南京)有限公司

S2M0080120N

1200VSICPOWERMOSFET

?Positivetemperaturecharacteristics,easytoparallel. ?Lowon-resistanceTyp.RDS(on)=77mΩ. ?Fastswitchingspeedandlowswitchinglosses. ?Veryfastandrobustintrinsicbodydiode. ?Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件(南京)有限公司

S2M0080120T

1200VSICPOWERMOSFET

?Positivetemperaturecharacteristics,easytoparallel. ?Lowon-resistanceTyp.RDS(on)=77mΩ. ?Fastswitchingspeedandlowswitchinglosses. ?Veryfastandrobustintrinsicbodydiode. ?Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件(南京)有限公司

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AKER TECHNOLOGY USA CORP
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更多S2M0080120D供應(yīng)商 更新時(shí)間2025-1-30 9:06:00