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C2M0080120D

Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features ?HighBlockingVoltagewithLowOn-Resistance ?HighSpeedSwitchingwithLowCapacitances ?EasytoParallelandSimpletoDrive ?AvalancheRuggedness ?HalogenFree,RoHSCompliant Benefits ?HigherSystemEfficiency ?ReducedCoolingRequirements ?IncreasedPowerDensity ?

WOLFSPEED

WOLFSPEED, INC.

C2M0080120D

SiC N-Channel MOSFET

FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=80mΩ（TYP.）@VGS=20VTJ=25℃ ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

C2M0080120D

CREE Silicon Carbide MOSFET Evaluation Kit

Description: ThisEvaluationkitismeanttodemonstratethehighperformanceofallCREE1200VMOSFETsandCREESchottkydiodes(SBD)instandardTO-247package.ThekitincludestwoCree80mOhm,1200VCREEMOSFETsandtwo1200V20Aschottkydiodes;ahalfbridgeconfiguredevaluationboardthat

CreeCree, Inc

科銳

C2M0080120D

Silicon Carbide Power MOSFET Z-FETTM MOSFET

CreeCree, Inc

科銳

C2M0080120D_15

Silicon Carbide Power MOSFET

CreeCree, Inc

科銳

S2M0080120D

1200VSICPOWERMOSFET

?Positivetemperaturecharacteristics,easytoparallel. ?Lowon-resistanceTyp.RDS(on)=77mΩ. ?Fastswitchingspeedandlowswitchinglosses. ?Veryfastandrobustintrinsicbodydiode. ?Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

S2M0080120J

1200VSICPOWERMOSFET

Positivetemperaturecharacteristics,easytoparallel. Lowon-resistanceTyp.RDS(on)=77mΩ. Fastswitchingspeedandlowswitchinglosses. Veryfastandrobustintrinsicbodydiode. Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

S2M0080120K

1200VSICPOWERMOSFET

?Positivetemperaturecharacteristics,easytoparallel. ?Lowon-resistanceTyp.RDS(on)=77mΩ. ?Fastswitchingspeedandlowswitchinglosses. ?Veryfastandrobustintrinsicbodydiode. ?“-A”isanAEC-Q101qualifieddevice ?Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

S2M0080120N

1200VSICPOWERMOSFET

?Positivetemperaturecharacteristics,easytoparallel. ?Lowon-resistanceTyp.RDS(on)=77mΩ. ?Fastswitchingspeedandlowswitchinglosses. ?Veryfastandrobustintrinsicbodydiode. ?Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

S2M0080120T

1200VSICPOWERMOSFET

?Positivetemperaturecharacteristics,easytoparallel. ?Lowon-resistanceTyp.RDS(on)=77mΩ. ?Fastswitchingspeedandlowswitchinglosses. ?Veryfastandrobustintrinsicbodydiode. ?Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    C2M0080120D

  • 功能描述：

    MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
EKOWEISS/艾科維斯
22+
TO-247-3
1000000
詢(xún)價(jià)
CREE
19+
TO247
10140
詢(xún)價(jià)
原裝
24+
標(biāo)準(zhǔn)
45651
熱賣(mài)原裝進(jìn)口
 詢(xún)價(jià)
CREE全系列可接受訂貨
23+
NA
9808
CREE進(jìn)口代理原裝優(yōu)勢(shì)供應(yīng)全系列可訂貨QQ1304306553
 詢(xún)價(jià)
CREE/科銳
24+
TO-247
3580
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗(yàn)歡迎詢(xún)價(jià)
 詢(xún)價(jià)
Cree
23+
TO-247
32078
10年以上分銷(xiāo)商,原裝進(jìn)口件,服務(wù)型企業(yè)
 詢(xún)價(jià)
CREE
24+
TO-247
4
只做原廠(chǎng)渠道 可追溯貨源
 詢(xún)價(jià)
CREE/科銳
23+
TO-247
900
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
 詢(xún)價(jià)
CREE
2019
TO-247
19700
INFINEON品牌專(zhuān)業(yè)原裝優(yōu)質(zhì)
 詢(xún)價(jià)
CREE
21+14+
TO-247
13
只做原裝正品
 詢(xún)價(jià)
更多C2M0080120D供應(yīng)商 更新時(shí)間2024-11-28 16:20:00

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