S70GL256M00FAIIRC0中文資料飛索數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

GENERAL DESCRIPTION

The S70GL256M00 consists of two 128 Mbit, 3.0 volt single power supply flash memory devices and is organized as 8,388,608 doublewords or 16,777,216 words. The device has a 32-bit wide data bus that can also function as an 16-bit wide data bus by using the WORD# input. The device can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics

ARCHITECTURAL ADVANTAGES

■ Single power supply operation

— 3 volt read, erase, and program operations

■ VersatileI/OTM control

— Device generates data output voltages and tolerates

data input voltages on the CE# and DQ inputs/outputs

as determined by the voltage on the VIO pin; operates

from 1.65 to 3.6 V

■ Manufactured on 0.23 μm MirrorBitTM process technology

■ SecSi? (Secured Silicon) Sector region

— 128-doubleword/256-word sector for permanent,

secure identification through an

8-doubleword/16-word random Electronic Serial

Number, accessible through a command sequence

— May be programmed and locked at the factory or by

the customer

■ Flexible sector architecture

— Two hundred fifty-six 32 Kdoubleword (64 Kword) sectors

■ Compatibility with JEDEC standards

— Provides pinout and software compatibility for

single-power supply flash, and superior inadvertent

write protection

■ 100,000 erase cycles typical per sector

■ 20-year data retention typical

PERFORMANCE CHARACTERISTICS

■ High performance

— 110 ns access time

— 30 ns page read times

— 0.5 s typical sector erase time

— 15 μs typical write buffer doubleword programming

time: 16-doubleword/32-word write buffer reduces

overall programming time for multiple-word updates

— 4-doubleword/8-word page read buffer

— 16-doubleword/32-word write buffer

■ Low power consumption (typical values at 3.0 V, 5 MHz)

— 26 mA typical active read current

— 100 mA typical erase/program current

— 2 μA typical standby mode current

■ Package options

— 80-ball Fortified BGA

SOFTWARE & HARDWARE FEATURES

■ Software features

— Program Suspend & Resume: read other sectors

before programming operation is completed

— Erase Suspend & Resume: read/program other

sectors before an erase operation is completed

— Data# polling & toggle bits provide status

— Unlock Bypass Program command reduces overall

programming time

— CFI (Common Flash Interface) compliant: allows host

system to identify and accommodate multiple flash

devices

■ Hardware features

— Sector Group Protection: hardware-level method of

preventing write operations within a sector group

— Temporary Sector Group Unprotect: VID-level method

of changing code in locked sector groups

— WP#/ACC input accelerates programming time

(when high voltage is applied) for greater throughput

during system production. Protects first or last sector

group regardless of sector group protection settings

— Hardware reset input (RESET#) resets device

— Ready/Busy# output (RY/BY#) detects program or

erase cycle completion