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S9013W

TRANSISTOR(NPN)

FEATURES ●HighCollectorCurrent ●ExcellentHFELinearity

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽半導(dǎo)體深圳市金譽半導(dǎo)體股份有限公司

S9013W

0.5A , 40V NPN Plastic Encapsulated Transistor

FEATURES ●HighCollectorCurrent ●ExcellentHFELinearity

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

S9013W

NPN Silicon Epitaxial Planar Transistor

FEATURES ●HighCollectorCurrent.(IC=500mA） ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PT=200mW) APPLICATIONS ●HighCollectorCurrent.

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀微電子股份有限公司

S9013W

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ●HighCollectorCurrent ●ExcellentHFELinearity

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

S9013W

NPN Silicon Epitaxial Planar Transistor

FEATURES ●HighCollectorCurrent.(IC=500mA） ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PT=200mW) APPLICATIONS ●HighCollectorCurrent.

DSK

Diode Semiconductor Korea

S9013W

SOT-323 Plastic-Encapsulate Transistors

FEATURES HighCollectorCurrent ExcellentHFELinearity

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

S9013W

NPN Silicon Epitaxial Planar Transistor

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀微電子股份有限公司

S9013W-SOT-323

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) Features ●HighCollectorCurrent ●ExcellentHFELinearity

HDSEMIJiangsu High diode Semiconductor Co., Ltd

蘇海德半導(dǎo)體蘇海德半導(dǎo)體有限公司

S9013W_14

NPN Silicon Epitaxial Planar Transistor

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀微電子股份有限公司

S9013W_15

NPN Plastic Encapsulated Transistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SM-BGA-9013

Highlycomplianttoaccommodatewideco-planarityvariations

IRONWOOD

Ironwood Electronics.

SM-QFN-9013

Lowandstablecontactresistanceforreliableproductionyield

IRONWOOD

Ironwood Electronics.

SS9013

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation.

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation. ?Hightotalpowerdissipation.(PT=625mW) ?HighCollectorCurrent.(IC=500mA) ?ComplementarytoSS9012 ?ExcellenthFElinearity.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SS9013D

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation.

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation. ?Hightotalpowerdissipation.(PT=625mW) ?HighCollectorCurrent.(IC=500mA) ?ComplementarytoSS9012 ?ExcellenthFElinearity.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SS9013E

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation.

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation. ?Hightotalpowerdissipation.(PT=625mW) ?HighCollectorCurrent.(IC=500mA) ?ComplementarytoSS9012 ?ExcellenthFElinearity.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SS9013F

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation.

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation. ?Hightotalpowerdissipation.(PT=625mW) ?HighCollectorCurrent.(IC=500mA) ?ComplementarytoSS9012 ?ExcellenthFElinearity.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SS9013G

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation.

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation. ?Hightotalpowerdissipation.(PT=625mW) ?HighCollectorCurrent.(IC=500mA) ?ComplementarytoSS9012 ?ExcellenthFElinearity.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SS9013H

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation.

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation. ?Hightotalpowerdissipation.(PT=625mW) ?HighCollectorCurrent.(IC=500mA) ?ComplementarytoSS9012 ?ExcellenthFElinearity.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

ST9013

NPNSiliconEpitaxialPlanarTransistor

forswitchingandamplifierapplications.EspeciallysuitableforAF-driverstagesandlowpoweroutputstages. Thetransistorissubdividedintothreegroups,G,HandI,accordingtoitsDCcurrentgain.AscomplementarytypethePNPtransistor9012isrecommended.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技（東莞）有限公司

STC9013N

EpitaxialplanarNPNsilicontransistor

Descriptions ?Generalpurposeapplication ?Switchingapplication Features ?ExcellenthFElinearity ?ComplementarypairwithSTA9012N

AUK

AUK corp

詳細參數(shù)

  • 型號：

    S9013W

  • 制造商：

    BILIN

  • 制造商全稱：

    Galaxy Semi-Conductor Holdings Limited

  • 功能描述：

    NPN Silicon Epitaxial Planar Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
CJ/長晶
24+
SOT-323
30000
長晶全系列二三極管原裝優(yōu)勢供應(yīng),歡迎詢價
 詢價
BILIN
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
長電
22+23+
SOT-323
24239
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
CJ/長電
22+
SOT-323
33000
原裝正品現(xiàn)貨,可開13點稅
 詢價
長電
24+
SOT-323
65300
一級代理/放心購買!
 詢價
CJ(江蘇長電/長晶)
2112+
SOT-323(SC-70)
105000
3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
長電
23+
SOT-323
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
DIODES/美臺
23+
SOT-323
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
長電
2021
SOT-323
57000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
長電
2219+
SOT-323
22170
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
更多S9013W供應(yīng)商 更新時間2025-1-19 9:02:00

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