BSS123

Marking：SA-；Package：SOT-23；N-channel enhancement mode vertical D-MOS transistor

GENERALDESCRIPTION N-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. TheBSS123issuppliedintheSOT23subminiaturesurfacemountingpackage. FEATURES ?’Trench’technology ?Extremelyfastswitching ?Logiclevelcompatible ?Subminiatur

BSS123

Marking：SA-；Package：SOT-23；N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe

BSS123

Marking：SA-；Package：SOT-23；N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe

BSS123

Marking：SA-；Package：SOT-23；N-channel TrenchMOS transistor