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AH21A2

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A1PROS

A1 PROs co., Ltd.

CEB21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,25A,RDS(ON)=40m?@VGS=4.5V. RDS(ON)=70m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,25A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,20A,RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=70mW@VGS=2.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,20A,RDS(ON)=40m?@VGS=4.5V. RDS(ON)=70m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,25A,RDS(ON)=40m?@VGS=4.5V. RDS(ON)=70m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,25A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,20A,RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=70mW@VGS=2.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,20A,RDS(ON)=40m?@VGS=4.5V. RDS(ON)=70m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU21A2

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

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sigatek
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50
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GW
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GW
SMB
68500
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SUNMATE(森美特)
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BILIN
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NA
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VISHAYMAS
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MDD
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PANJIT
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24+
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66530
全新原裝現(xiàn)貨/假一罰百!
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更多SB21A2供應(yīng)商 更新時(shí)間2025-3-25 10:00:00

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