SCT040H65G3SAG中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

廠商型號	SCT040H65G3SAG
功能描述	Automotive-grade silicon carbide Power MOSFET 650 V, 40 m typ., 30 A in an H2PAK-7 straight leads package
文件大小	227.64 Kbytes
頁面數(shù)量	12 頁
生產(chǎn)廠商	STMicroelectronics
企業(yè)簡稱	STMICROELECTRONICS【意法半導體】
中文名稱	意法半導體集團官網(wǎng)
原廠標識
數(shù)據(jù)手冊	下載地址一下載地址二到原廠下載
更新時間	2025-2-10 11:06:00

Features

? AEC-Q101 qualified

? Very low RDS(on) over the entire temperature range

? High speed switching performances

? Very fast and robust intrinsic body diode

? Source sensing pin for increased efficiency

Description

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 3rd generation SiC MOSFET technology. The device

features a very low RDS(on) over the entire temperature range combined with

low capacitances and very high switching operations, which improve application

performance in frequency, energy efficiency, system size and weight reduction.

Applications

? Main inverter (electric traction)

? DC/DC converter for EV/HEV

? On board charger (OBC)